Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy

Y. F. Ng; Y. G. Cao; M. H. Xie; X. L. Wang; S. Y. Tong

doi:10.1063/1.1523638

Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy

Y. F. Ng, Y. G. Cao, M. H. Xie^*, X. L. Wang, S. Y. Tong

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

92 Citations (Scopus)

Abstract

The plasma-assisted molecular-beam epitaxy technique was used to study the epitaxial growth of InN on GaN. A relationship between film growth mode and the deposition condition was established by combining reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). The sustained RHEED intensity oscillations were recorded for 2D growth while 2D nucleation islands were revealed by STM. Results showed less than three oscillation periods for 3 D growth, indicating the Strnski-Krastanov (SK) growth mode of the film.

Original language	English
Pages (from-to)	3960-3962
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	21
DOIs	https://doi.org/10.1063/1.1523638
Publication status	Published - 18 Nov 2002
Externally published	Yes

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title = "Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy",

abstract = "The plasma-assisted molecular-beam epitaxy technique was used to study the epitaxial growth of InN on GaN. A relationship between film growth mode and the deposition condition was established by combining reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). The sustained RHEED intensity oscillations were recorded for 2D growth while 2D nucleation islands were revealed by STM. Results showed less than three oscillation periods for 3 D growth, indicating the Strnski-Krastanov (SK) growth mode of the film.",

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T1 - Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy

AU - Ng, Y. F.

AU - Cao, Y. G.

AU - Xie, M. H.

AU - Wang, X. L.

AU - Tong, S. Y.

PY - 2002/11/18

Y1 - 2002/11/18

N2 - The plasma-assisted molecular-beam epitaxy technique was used to study the epitaxial growth of InN on GaN. A relationship between film growth mode and the deposition condition was established by combining reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). The sustained RHEED intensity oscillations were recorded for 2D growth while 2D nucleation islands were revealed by STM. Results showed less than three oscillation periods for 3 D growth, indicating the Strnski-Krastanov (SK) growth mode of the film.

AB - The plasma-assisted molecular-beam epitaxy technique was used to study the epitaxial growth of InN on GaN. A relationship between film growth mode and the deposition condition was established by combining reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). The sustained RHEED intensity oscillations were recorded for 2D growth while 2D nucleation islands were revealed by STM. Results showed less than three oscillation periods for 3 D growth, indicating the Strnski-Krastanov (SK) growth mode of the film.

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000179207300016

UR - https://openalex.org/W2083568234

UR - https://www.scopus.com/pages/publications/0037132248

U2 - 10.1063/1.1523638

DO - 10.1063/1.1523638

M3 - Journal Article

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VL - 81

SP - 3960

EP - 3962

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy

Abstract

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