Hetero-epitaxy of III-V compounds lattice-matched to InP by MOCVD for device applications

Chak Wah Tang; Haiou Li; Zhenyu Zhong; Kai Lun Ng; Kei May Lau

doi:10.1109/ICIPRM.2009.5012460

Hetero-epitaxy of III-V compounds lattice-matched to InP by MOCVD for device applications

Chak Wah Tang, Haiou Li, Zhenyu Zhong, Kai Lun Ng, Kei May Lau

Division of Emerging Interdisciplinary Areas

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

4 Citations (Scopus)

Abstract

Device quality Al_0.49In_0.51As/Ga _0.47In_0.53As MHEMT structures have been grown by MOCVD on GaAs substrates, with 2-DEG mobility over 8700 cm²/V-s and sheet carrier density at around 4 × 10¹² cm^-2. A 150 nm T-gate transistor demonstrated unity current gain cutoff frequency (f _T) and maximum oscillation frequency (f_max) of 279 and 231 GHz, respectively.

Original language	English
Title of host publication	IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
Pages	136-139
Number of pages	4
DOIs	https://doi.org/10.1109/ICIPRM.2009.5012460
Publication status	Published - 2009
Event	IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 - Newport Beach, CA, United States Duration: 10 May 2009 → 14 May 2009

Publication series

Name	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)	1092-8669

Conference

Conference	IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
Country/Territory	United States
City	Newport Beach, CA
Period	10/05/09 → 14/05/09

Keywords

AlInAs/GaInAs
LT buffer
MHEMTs
MOCVD
Metamorphic HEMT

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10.1109/ICIPRM.2009.5012460

Cite this

Tang, C. W., Li, H., Zhong, Z., Ng, K. L., & Lau, K. M. (2009). Hetero-epitaxy of III-V compounds lattice-matched to InP by MOCVD for device applications. In IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 (pp. 136-139). Article 5012460 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2009.5012460

@inproceedings{e4f4f0a1aee4416eaf19295b17039b1e,

title = "Hetero-epitaxy of III-V compounds lattice-matched to InP by MOCVD for device applications",

abstract = "Device quality Al0.49In0.51As/Ga 0.47In0.53As MHEMT structures have been grown by MOCVD on GaAs substrates, with 2-DEG mobility over 8700 cm2/V-s and sheet carrier density at around 4 × 1012 cm-2. A 150 nm T-gate transistor demonstrated unity current gain cutoff frequency (f T) and maximum oscillation frequency (fmax) of 279 and 231 GHz, respectively.",

keywords = "AlInAs/GaInAs, LT buffer, MHEMTs, MOCVD, Metamorphic HEMT",

author = "Tang, \{Chak Wah\} and Haiou Li and Zhenyu Zhong and Ng, \{Kai Lun\} and Lau, \{Kei May\}",

year = "2009",

doi = "10.1109/ICIPRM.2009.5012460",

language = "English",

isbn = "9781424434336",

series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

pages = "136--139",

booktitle = "IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009",

note = "IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 ; Conference date: 10-05-2009 Through 14-05-2009",

}

Tang, CW, Li, H, Zhong, Z, Ng, KL & Lau, KM 2009, Hetero-epitaxy of III-V compounds lattice-matched to InP by MOCVD for device applications. in IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009., 5012460, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, pp. 136-139, IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009, Newport Beach, CA, United States, 10/05/09. https://doi.org/10.1109/ICIPRM.2009.5012460

Hetero-epitaxy of III-V compounds lattice-matched to InP by MOCVD for device applications. / Tang, Chak Wah; Li, Haiou; Zhong, Zhenyu et al.
IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009. 2009. p. 136-139 5012460 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Hetero-epitaxy of III-V compounds lattice-matched to InP by MOCVD for device applications

AU - Tang, Chak Wah

AU - Li, Haiou

AU - Zhong, Zhenyu

AU - Ng, Kai Lun

AU - Lau, Kei May

PY - 2009

Y1 - 2009

N2 - Device quality Al0.49In0.51As/Ga 0.47In0.53As MHEMT structures have been grown by MOCVD on GaAs substrates, with 2-DEG mobility over 8700 cm2/V-s and sheet carrier density at around 4 × 1012 cm-2. A 150 nm T-gate transistor demonstrated unity current gain cutoff frequency (f T) and maximum oscillation frequency (fmax) of 279 and 231 GHz, respectively.

AB - Device quality Al0.49In0.51As/Ga 0.47In0.53As MHEMT structures have been grown by MOCVD on GaAs substrates, with 2-DEG mobility over 8700 cm2/V-s and sheet carrier density at around 4 × 1012 cm-2. A 150 nm T-gate transistor demonstrated unity current gain cutoff frequency (f T) and maximum oscillation frequency (fmax) of 279 and 231 GHz, respectively.

KW - AlInAs/GaInAs

KW - LT buffer

KW - MHEMTs

KW - MOCVD

KW - Metamorphic HEMT

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000270539400036

UR - https://openalex.org/W2170499869

UR - https://www.scopus.com/pages/publications/70349506630

U2 - 10.1109/ICIPRM.2009.5012460

DO - 10.1109/ICIPRM.2009.5012460

M3 - Conference Paper published in a book

SN - 9781424434336

T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

SP - 136

EP - 139

BT - IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009

T2 - IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009

Y2 - 10 May 2009 through 14 May 2009

ER -

Tang CW, Li H, Zhong Z, Ng KL, Lau KM. Hetero-epitaxy of III-V compounds lattice-matched to InP by MOCVD for device applications. In IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009. 2009. p. 136-139. 5012460. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). doi: 10.1109/ICIPRM.2009.5012460

Hetero-epitaxy of III-V compounds lattice-matched to InP by MOCVD for device applications

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