TY - JOUR
T1 - High-brightness organic double-quantum-well electroluminescent devices
AU - Huang, Jingsong
AU - Yang, Kaixia
AU - Liu, Shiyong
AU - Jiang, Hongjin
PY - 2000/9/18
Y1 - 2000/9/18
N2 - An organic double-quantum-well structure electroluminescent device fabricated by a doping method is demonstrated. The device consists of N,N′-bis-(1-naphthl)-N,N′-diphenyl-1,1′-biphenyl-4,4′- diamine (NPB) used as a hole transporter, undoped tris(8-quinolinolato) aluminum (Alq) as a barrier potential or electron transporter, and Alq doped with 5,6,11,12-tetraphenylnaphthacene (rubrene) as a potential well and emitter, and has the following structure: indium tin oxide/NPB/ Alq:rubrene/Alq/Alq:rubrene/Alq/Mg/Al. The maximum brightness and efficiency reach 48000 cd/m2 and 4.59 lm/W, respectively. The present double-quantum-well structure device shows higher brightness and higher efficiency than those of the common heterostructure devices.
AB - An organic double-quantum-well structure electroluminescent device fabricated by a doping method is demonstrated. The device consists of N,N′-bis-(1-naphthl)-N,N′-diphenyl-1,1′-biphenyl-4,4′- diamine (NPB) used as a hole transporter, undoped tris(8-quinolinolato) aluminum (Alq) as a barrier potential or electron transporter, and Alq doped with 5,6,11,12-tetraphenylnaphthacene (rubrene) as a potential well and emitter, and has the following structure: indium tin oxide/NPB/ Alq:rubrene/Alq/Alq:rubrene/Alq/Mg/Al. The maximum brightness and efficiency reach 48000 cd/m2 and 4.59 lm/W, respectively. The present double-quantum-well structure device shows higher brightness and higher efficiency than those of the common heterostructure devices.
UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000089239000004
U2 - 10.1063/1.1311313
DO - 10.1063/1.1311313
M3 - Journal Article
SN - 0003-6951
VL - 77
SP - 1750
EP - 1752
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 12
ER -