High-brightness organic double-quantum-well electroluminescent devices

Jingsong Huang; Kaixia Yang; Shiyong Liu; Hongjin Jiang

doi:10.1063/1.1311313

High-brightness organic double-quantum-well electroluminescent devices

Jingsong Huang^*
, Kaixia Yang
, Shiyong Liu
, Hongjin Jiang

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

52 Citations (Scopus)

Abstract

An organic double-quantum-well structure electroluminescent device fabricated by a doping method is demonstrated. The device consists of N,N′-bis-(1-naphthl)-N,N′-diphenyl-1,1′-biphenyl-4,4′- diamine (NPB) used as a hole transporter, undoped tris(8-quinolinolato) aluminum (Alq) as a barrier potential or electron transporter, and Alq doped with 5,6,11,12-tetraphenylnaphthacene (rubrene) as a potential well and emitter, and has the following structure: indium tin oxide/NPB/ Alq:rubrene/Alq/Alq:rubrene/Alq/Mg/Al. The maximum brightness and efficiency reach 48000 cd/m² and 4.59 lm/W, respectively. The present double-quantum-well structure device shows higher brightness and higher efficiency than those of the common heterostructure devices.

Original language	English
Pages (from-to)	1750-1752
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	12
DOIs	https://doi.org/10.1063/1.1311313
Publication status	Published - 18 Sept 2000
Externally published	Yes

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@article{d1e030b5031147f28ebb882fe13f61d5,

title = "High-brightness organic double-quantum-well electroluminescent devices",

abstract = "An organic double-quantum-well structure electroluminescent device fabricated by a doping method is demonstrated. The device consists of N,N′-bis-(1-naphthl)-N,N′-diphenyl-1,1′-biphenyl-4,4′- diamine (NPB) used as a hole transporter, undoped tris(8-quinolinolato) aluminum (Alq) as a barrier potential or electron transporter, and Alq doped with 5,6,11,12-tetraphenylnaphthacene (rubrene) as a potential well and emitter, and has the following structure: indium tin oxide/NPB/ Alq:rubrene/Alq/Alq:rubrene/Alq/Mg/Al. The maximum brightness and efficiency reach 48000 cd/m2 and 4.59 lm/W, respectively. The present double-quantum-well structure device shows higher brightness and higher efficiency than those of the common heterostructure devices.",

author = "Jingsong Huang and Kaixia Yang and Shiyong Liu and Hongjin Jiang",

year = "2000",

month = sep,

day = "18",

doi = "10.1063/1.1311313",

language = "English",

volume = "77",

pages = "1750--1752",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - High-brightness organic double-quantum-well electroluminescent devices

AU - Huang, Jingsong

AU - Yang, Kaixia

AU - Liu, Shiyong

AU - Jiang, Hongjin

PY - 2000/9/18

Y1 - 2000/9/18

N2 - An organic double-quantum-well structure electroluminescent device fabricated by a doping method is demonstrated. The device consists of N,N′-bis-(1-naphthl)-N,N′-diphenyl-1,1′-biphenyl-4,4′- diamine (NPB) used as a hole transporter, undoped tris(8-quinolinolato) aluminum (Alq) as a barrier potential or electron transporter, and Alq doped with 5,6,11,12-tetraphenylnaphthacene (rubrene) as a potential well and emitter, and has the following structure: indium tin oxide/NPB/ Alq:rubrene/Alq/Alq:rubrene/Alq/Mg/Al. The maximum brightness and efficiency reach 48000 cd/m2 and 4.59 lm/W, respectively. The present double-quantum-well structure device shows higher brightness and higher efficiency than those of the common heterostructure devices.

AB - An organic double-quantum-well structure electroluminescent device fabricated by a doping method is demonstrated. The device consists of N,N′-bis-(1-naphthl)-N,N′-diphenyl-1,1′-biphenyl-4,4′- diamine (NPB) used as a hole transporter, undoped tris(8-quinolinolato) aluminum (Alq) as a barrier potential or electron transporter, and Alq doped with 5,6,11,12-tetraphenylnaphthacene (rubrene) as a potential well and emitter, and has the following structure: indium tin oxide/NPB/ Alq:rubrene/Alq/Alq:rubrene/Alq/Mg/Al. The maximum brightness and efficiency reach 48000 cd/m2 and 4.59 lm/W, respectively. The present double-quantum-well structure device shows higher brightness and higher efficiency than those of the common heterostructure devices.

UR - https://openalex.org/W2024517045

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000089239000004

U2 - 10.1063/1.1311313

DO - 10.1063/1.1311313

M3 - Journal Article

SN - 0003-6951

VL - 77

SP - 1750

EP - 1752

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

High-brightness organic double-quantum-well electroluminescent devices

Abstract

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