High-Efficiency E-Beam Pumped Deep-Ultraviolet Surface Emitter Based on AlGaN Ultra-Thin Staggered Quantum Wells

Yixin Wang; Ye Yuan; Renchun Tao; Shangfeng Liu; Tao Wang; Shanshan Sheng; Patrick Quach; C. M. Manoj Kumar; Zhaoying Chen; Fang Liu; Xin Rong; Peng Jin; Mengyang Feng; Hongwei Li; Shiping Guo; Weikun Ge; June Key Lee; Bo Shen; Xinqiang Wang

doi:10.1002/adom.202200011

High-Efficiency E-Beam Pumped Deep-Ultraviolet Surface Emitter Based on AlGaN Ultra-Thin Staggered Quantum Wells

Yixin Wang, Ye Yuan, Renchun Tao, Shangfeng Liu, Tao Wang, Shanshan Sheng, Patrick Quach, C. M. Manoj Kumar, Zhaoying Chen, Fang Liu, Xin Rong, Peng Jin, Mengyang Feng, Hongwei Li, Shiping Guo, Weikun Ge, June Key Lee, Bo Shen, Xinqiang Wang^*

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

7 Citations (Scopus)

Abstract

A 2-inch wafer-scale electron-beam (e-beam) pumped deep-ultraviolet surface emitter (DUVSE) with high efficiency and high output power at an emission wavelength of 248 nm is reported. This DUVSE benefits from ultra-thin staggered AlN/AlGaN/GaN multiple quantum wells (MQWs), which compromise the electron–hole overlap and carrier confinement and thus significantly improve the emission efficiency. The wall-plug-efficiency (WPE) is increased by six times to 5.25% in comparison to that of conventional DUV light-emitting devices (LEDs) based on AlGaN MQWs. This WPE is achieved under an anode voltage and current of 8 kV and 1 mA, where the output power is 420 mW. This output power can be further enhanced to 702 mW by increasing the anode current to 3 mA. The enhanced WPE and uniform electron beam distribution lighten the avenue to achieve a wafer-scale high power dense DUV light source, which is a challenge for conventional DUV-LEDs, in particular with an emission wavelength of less than 250 nm.

Original language	English
Article number	2200011
Journal	Advanced Optical Materials
Volume	10
Issue number	18
DOIs	https://doi.org/10.1002/adom.202200011
Publication status	Published - 19 Sept 2022
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2022 Wiley-VCH GmbH.

Keywords

deep ultraviolet
high output power
metal-organic chemical vapor deposition
ultra-thin multiple quantum wells

Access to Document

10.1002/adom.202200011

Cite this

Wang, Y., Yuan, Y., Tao, R., Liu, S., Wang, T., Sheng, S., Quach, P., Manoj Kumar, C. M., Chen, Z., Liu, F., Rong, X., Jin, P., Feng, M., Li, H., Guo, S., Ge, W., Lee, J. K., Shen, B., & Wang, X. (2022). High-Efficiency E-Beam Pumped Deep-Ultraviolet Surface Emitter Based on AlGaN Ultra-Thin Staggered Quantum Wells. Advanced Optical Materials, 10(18), Article 2200011. https://doi.org/10.1002/adom.202200011

@article{40229ecc4ad247b3b1a541f31b0e8648,

title = "High-Efficiency E-Beam Pumped Deep-Ultraviolet Surface Emitter Based on AlGaN Ultra-Thin Staggered Quantum Wells",

abstract = "A 2-inch wafer-scale electron-beam (e-beam) pumped deep-ultraviolet surface emitter (DUVSE) with high efficiency and high output power at an emission wavelength of 248 nm is reported. This DUVSE benefits from ultra-thin staggered AlN/AlGaN/GaN multiple quantum wells (MQWs), which compromise the electron–hole overlap and carrier confinement and thus significantly improve the emission efficiency. The wall-plug-efficiency (WPE) is increased by six times to 5.25\% in comparison to that of conventional DUV light-emitting devices (LEDs) based on AlGaN MQWs. This WPE is achieved under an anode voltage and current of 8 kV and 1 mA, where the output power is 420 mW. This output power can be further enhanced to 702 mW by increasing the anode current to 3 mA. The enhanced WPE and uniform electron beam distribution lighten the avenue to achieve a wafer-scale high power dense DUV light source, which is a challenge for conventional DUV-LEDs, in particular with an emission wavelength of less than 250 nm.",

keywords = "deep ultraviolet, high output power, metal-organic chemical vapor deposition, ultra-thin multiple quantum wells",

author = "Yixin Wang and Ye Yuan and Renchun Tao and Shangfeng Liu and Tao Wang and Shanshan Sheng and Patrick Quach and \{Manoj Kumar\}, \{C. M.\} and Zhaoying Chen and Fang Liu and Xin Rong and Peng Jin and Mengyang Feng and Hongwei Li and Shiping Guo and Weikun Ge and Lee, \{June Key\} and Bo Shen and Xinqiang Wang",

note = "Publisher Copyright: {\textcopyright} 2022 Wiley-VCH GmbH.",

year = "2022",

month = sep,

day = "19",

doi = "10.1002/adom.202200011",

language = "English",

volume = "10",

journal = "Advanced Optical Materials",

issn = "2195-1071",

publisher = "John Wiley \& Sons Inc.",

number = "18",

}

Wang, Y, Yuan, Y, Tao, R, Liu, S, Wang, T, Sheng, S, Quach, P, Manoj Kumar, CM, Chen, Z, Liu, F, Rong, X, Jin, P, Feng, M, Li, H, Guo, S, Ge, W, Lee, JK, Shen, B & Wang, X 2022, 'High-Efficiency E-Beam Pumped Deep-Ultraviolet Surface Emitter Based on AlGaN Ultra-Thin Staggered Quantum Wells', Advanced Optical Materials, vol. 10, no. 18, 2200011. https://doi.org/10.1002/adom.202200011

TY - JOUR

T1 - High-Efficiency E-Beam Pumped Deep-Ultraviolet Surface Emitter Based on AlGaN Ultra-Thin Staggered Quantum Wells

AU - Wang, Yixin

AU - Yuan, Ye

AU - Tao, Renchun

AU - Liu, Shangfeng

AU - Wang, Tao

AU - Sheng, Shanshan

AU - Quach, Patrick

AU - Manoj Kumar, C. M.

AU - Chen, Zhaoying

AU - Liu, Fang

AU - Rong, Xin

AU - Jin, Peng

AU - Feng, Mengyang

AU - Li, Hongwei

AU - Guo, Shiping

AU - Ge, Weikun

AU - Lee, June Key

AU - Shen, Bo

AU - Wang, Xinqiang

PY - 2022/9/19

Y1 - 2022/9/19

N2 - A 2-inch wafer-scale electron-beam (e-beam) pumped deep-ultraviolet surface emitter (DUVSE) with high efficiency and high output power at an emission wavelength of 248 nm is reported. This DUVSE benefits from ultra-thin staggered AlN/AlGaN/GaN multiple quantum wells (MQWs), which compromise the electron–hole overlap and carrier confinement and thus significantly improve the emission efficiency. The wall-plug-efficiency (WPE) is increased by six times to 5.25% in comparison to that of conventional DUV light-emitting devices (LEDs) based on AlGaN MQWs. This WPE is achieved under an anode voltage and current of 8 kV and 1 mA, where the output power is 420 mW. This output power can be further enhanced to 702 mW by increasing the anode current to 3 mA. The enhanced WPE and uniform electron beam distribution lighten the avenue to achieve a wafer-scale high power dense DUV light source, which is a challenge for conventional DUV-LEDs, in particular with an emission wavelength of less than 250 nm.

AB - A 2-inch wafer-scale electron-beam (e-beam) pumped deep-ultraviolet surface emitter (DUVSE) with high efficiency and high output power at an emission wavelength of 248 nm is reported. This DUVSE benefits from ultra-thin staggered AlN/AlGaN/GaN multiple quantum wells (MQWs), which compromise the electron–hole overlap and carrier confinement and thus significantly improve the emission efficiency. The wall-plug-efficiency (WPE) is increased by six times to 5.25% in comparison to that of conventional DUV light-emitting devices (LEDs) based on AlGaN MQWs. This WPE is achieved under an anode voltage and current of 8 kV and 1 mA, where the output power is 420 mW. This output power can be further enhanced to 702 mW by increasing the anode current to 3 mA. The enhanced WPE and uniform electron beam distribution lighten the avenue to achieve a wafer-scale high power dense DUV light source, which is a challenge for conventional DUV-LEDs, in particular with an emission wavelength of less than 250 nm.

KW - deep ultraviolet

KW - high output power

KW - metal-organic chemical vapor deposition

KW - ultra-thin multiple quantum wells

UR - https://www.scopus.com/pages/publications/85132550043

U2 - 10.1002/adom.202200011

DO - 10.1002/adom.202200011

M3 - Journal Article

AN - SCOPUS:85132550043

SN - 2195-1071

VL - 10

JO - Advanced Optical Materials

JF - Advanced Optical Materials

IS - 18

M1 - 2200011

ER -

High-Efficiency E-Beam Pumped Deep-Ultraviolet Surface Emitter Based on AlGaN Ultra-Thin Staggered Quantum Wells

Abstract

Bibliographical note

Keywords

Access to Document

Other files and links

Fingerprint

Cite this