High frequency distortion analysis of DMOS transistors

J. K.O. Sin; C. A.T. Salama

High frequency distortion analysis of DMOS transistors

J. K.O. Sin^*, C. A.T. Salama

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

2 Citations (Scopus)

Abstract

Distortion in double-diffused MOS transistors (DMOS) at high frequencies is considered in this paper. A high-frequency model, including nonlinearities, is developed for lateral double-diffused transistors (LDMOS). A complete distortion analysis, based on this model and using the Volterra Series approach, is then presented. Analytical expressions for second- and third-order intermodulation distortions are also obtained. Good agreement between first-order theory and experiment is obtained.

Original language	English
Pages (from-to)	1223-1233
Number of pages	11
Journal	Solid-State Electronics
Volume	28
Issue number	12
Publication status	Published - Dec 1985
Externally published	Yes

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@article{09391684ce8241e985cf47cea1eedf79,

title = "High frequency distortion analysis of DMOS transistors",

abstract = "Distortion in double-diffused MOS transistors (DMOS) at high frequencies is considered in this paper. A high-frequency model, including nonlinearities, is developed for lateral double-diffused transistors (LDMOS). A complete distortion analysis, based on this model and using the Volterra Series approach, is then presented. Analytical expressions for second- and third-order intermodulation distortions are also obtained. Good agreement between first-order theory and experiment is obtained.",

author = "Sin, \{J. K.O.\} and Salama, \{C. A.T.\}",

year = "1985",

month = dec,

language = "English",

volume = "28",

pages = "1223--1233",

journal = "Solid-State Electronics",

issn = "0038-1101",

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number = "12",

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TY - JOUR

T1 - High frequency distortion analysis of DMOS transistors

AU - Sin, J. K.O.

AU - Salama, C. A.T.

PY - 1985/12

Y1 - 1985/12

N2 - Distortion in double-diffused MOS transistors (DMOS) at high frequencies is considered in this paper. A high-frequency model, including nonlinearities, is developed for lateral double-diffused transistors (LDMOS). A complete distortion analysis, based on this model and using the Volterra Series approach, is then presented. Analytical expressions for second- and third-order intermodulation distortions are also obtained. Good agreement between first-order theory and experiment is obtained.

AB - Distortion in double-diffused MOS transistors (DMOS) at high frequencies is considered in this paper. A high-frequency model, including nonlinearities, is developed for lateral double-diffused transistors (LDMOS). A complete distortion analysis, based on this model and using the Volterra Series approach, is then presented. Analytical expressions for second- and third-order intermodulation distortions are also obtained. Good agreement between first-order theory and experiment is obtained.

UR - https://www.scopus.com/pages/publications/17544395340

M3 - Journal Article

SN - 0038-1101

VL - 28

SP - 1223

EP - 1233

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 12

ER -

High frequency distortion analysis of DMOS transistors

Abstract

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