High Frequency Monolithic Inductor with Air-Gaps

Clarissa Prawoto; Zichao Ma; Ying Xiao; Salahuddin Raju; Changjian Zhou; Mansun Chan

doi:10.1109/EDTM47692.2020.9117825

High Frequency Monolithic Inductor with Air-Gaps

Clarissa Prawoto, Zichao Ma, Ying Xiao, Salahuddin Raju, Changjian Zhou, Mansun Chan

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

1 Citation (Scopus)

Abstract

In this paper, we evaluate the possible implementation of air-gaps for extending the operating range of an RF on-chip inductor, without affecting the inductance. To determine where air-gaps should be placed, the dominant parasitic capacitance component of an inductor is first identified, using an equivalent circuit model to extract their values from numerical simulation data. An air-gap fabrication in the back-end of line technology is given to illustrate for the feasibility of the integration. Based on the fabricated array of air-gaps at a 2:1 void-to-dielectric interval, we show that the capacitance is reduced by 40%, which translates to an increase in the inductor self-resonance frequency by 20% to 27 GHz, while having a large value inductance at 1.5 nH range.

Original language	English
Title of host publication	4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728125381
DOIs	https://doi.org/10.1109/EDTM47692.2020.9117825
Publication status	Published - Apr 2020
Event	4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Penang, Malaysia Duration: 6 Apr 2020 → 21 Apr 2020

Publication series

Name	4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings

Conference

Conference	4th Electron Devices Technology and Manufacturing Conference, EDTM 2020
Country/Territory	Malaysia
City	Penang
Period	6/04/20 → 21/04/20

Bibliographical note

Publisher Copyright:
© 2020 IEEE.

Keywords

Air-gap
BEOL
Inductor
RF
h-BN

Access to Document

10.1109/EDTM47692.2020.9117825

Cite this

Prawoto, C., Ma, Z., Xiao, Y., Raju, S., Zhou, C., & Chan, M. (2020). High Frequency Monolithic Inductor with Air-Gaps. In 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings Article 9117825 (4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM47692.2020.9117825

@inproceedings{16f551eb952e4cfd98ed1b73701515e7,

title = "High Frequency Monolithic Inductor with Air-Gaps",

abstract = "In this paper, we evaluate the possible implementation of air-gaps for extending the operating range of an RF on-chip inductor, without affecting the inductance. To determine where air-gaps should be placed, the dominant parasitic capacitance component of an inductor is first identified, using an equivalent circuit model to extract their values from numerical simulation data. An air-gap fabrication in the back-end of line technology is given to illustrate for the feasibility of the integration. Based on the fabricated array of air-gaps at a 2:1 void-to-dielectric interval, we show that the capacitance is reduced by 40\%, which translates to an increase in the inductor self-resonance frequency by 20\% to 27 GHz, while having a large value inductance at 1.5 nH range.",

keywords = "Air-gap, BEOL, Inductor, RF, h-BN",

author = "Clarissa Prawoto and Zichao Ma and Ying Xiao and Salahuddin Raju and Changjian Zhou and Mansun Chan",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 ; Conference date: 06-04-2020 Through 21-04-2020",

year = "2020",

month = apr,

doi = "10.1109/EDTM47692.2020.9117825",

language = "English",

series = "4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings",

}

Prawoto, C, Ma, Z, Xiao, Y, Raju, S, Zhou, C & Chan, M 2020, High Frequency Monolithic Inductor with Air-Gaps. in 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings., 9117825, 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020, Penang, Malaysia, 6/04/20. https://doi.org/10.1109/EDTM47692.2020.9117825

High Frequency Monolithic Inductor with Air-Gaps. / Prawoto, Clarissa; Ma, Zichao; Xiao, Ying et al.
4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2020. 9117825 (4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - High Frequency Monolithic Inductor with Air-Gaps

AU - Prawoto, Clarissa

AU - Ma, Zichao

AU - Xiao, Ying

AU - Raju, Salahuddin

AU - Zhou, Changjian

AU - Chan, Mansun

PY - 2020/4

Y1 - 2020/4

N2 - In this paper, we evaluate the possible implementation of air-gaps for extending the operating range of an RF on-chip inductor, without affecting the inductance. To determine where air-gaps should be placed, the dominant parasitic capacitance component of an inductor is first identified, using an equivalent circuit model to extract their values from numerical simulation data. An air-gap fabrication in the back-end of line technology is given to illustrate for the feasibility of the integration. Based on the fabricated array of air-gaps at a 2:1 void-to-dielectric interval, we show that the capacitance is reduced by 40%, which translates to an increase in the inductor self-resonance frequency by 20% to 27 GHz, while having a large value inductance at 1.5 nH range.

AB - In this paper, we evaluate the possible implementation of air-gaps for extending the operating range of an RF on-chip inductor, without affecting the inductance. To determine where air-gaps should be placed, the dominant parasitic capacitance component of an inductor is first identified, using an equivalent circuit model to extract their values from numerical simulation data. An air-gap fabrication in the back-end of line technology is given to illustrate for the feasibility of the integration. Based on the fabricated array of air-gaps at a 2:1 void-to-dielectric interval, we show that the capacitance is reduced by 40%, which translates to an increase in the inductor self-resonance frequency by 20% to 27 GHz, while having a large value inductance at 1.5 nH range.

KW - Air-gap

KW - BEOL

KW - Inductor

KW - RF

KW - h-BN

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000610825100023

UR - https://openalex.org/W3036679375

UR - https://www.scopus.com/pages/publications/85091983674

U2 - 10.1109/EDTM47692.2020.9117825

DO - 10.1109/EDTM47692.2020.9117825

M3 - Conference Paper published in a book

T3 - 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings

BT - 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020

Y2 - 6 April 2020 through 21 April 2020

ER -

Prawoto C, Ma Z, Xiao Y, Raju S, Zhou C, Chan M. High Frequency Monolithic Inductor with Air-Gaps. In 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2020. 9117825. (4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings). doi: 10.1109/EDTM47692.2020.9117825

High Frequency Monolithic Inductor with Air-Gaps

Abstract

Publication series

Conference

Bibliographical note

Keywords

Access to Document

Other files and links

Fingerprint

Cite this