High open-circuit voltage CuSbS2 solar cells achieved through the formation of epitaxial growth of CdS/CuSbS2 hetero-interface by post-annealing treatment

Yuanfang Zhang; Jialiang Huang; Chang Yan; Kaiwen Sun; Xin Cui; Fangyang Liu; Ziheng Liu; Xueyun Zhang; Xu Liu; John A. Stride; Martin A. Green; Xiaojing Hao

High open-circuit voltage CuSbS₂ solar cells achieved through the formation of epitaxial growth of CdS/CuSbS₂ hetero-interface by post-annealing treatment

Yuanfang Zhang
, Jialiang Huang
, Chang Yan
, Kaiwen Sun
, Xin Cui
, Fangyang Liu
, Ziheng Liu
, Xueyun Zhang
, Xu Liu
, John A. Stride
, Martin A. Green
, Xiaojing Hao^*

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

Abstract

The earth-abundant and environmentally-friendly CuSbS₂ solar cells have been struggling with low device performance, especially poor open circuit voltage (V_oc). In this work, post-annealing treatment of the CuSbS₂/CdS heterojunction performed on CuSbS₂-based solar cells was firstly reported. With this treatment, we demonstrated CuSbS₂ solar cells with a record V_oc of 622 mV. The improvement of device performance was found peaked at 250°C post-annealing which mainly benefits from the significantly boosted open-circuit voltage and short-circuit current. The study of microstructure by high-resolution transmission electron microscopy revealed that such improvement could be attributed to the formation of epitaxial CuSbS₂/CdS hetero-interface upon heat treatment, which reduces the interface defect density that may lead to reduced V_oc deficit. Besides, results of photoluminescence and time-resolved photoluminescence measurements also indicated improved electrical properties of completed devices with higher photoluminescence intensity and longer minority carrier lifetime.

Original language	English
Pages (from-to)	37-43
Number of pages	7
Journal	Progress in Photovoltaics: Research and Applications
Volume	27
Issue number	1
Publication status	Published - Jan 2019
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2018 John Wiley & Sons, Ltd.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

CuSbS
V deficit
epitaxy growth
post-annealing

Access to Document

https://hdl.handle.net/1783.1/122127

Cite this

Zhang, Y., Huang, J., Yan, C., Sun, K., Cui, X., Liu, F., Liu, Z., Zhang, X., Liu, X., Stride, J. A., Green, M. A., & Hao, X. (2019). High open-circuit voltage CuSbS₂ solar cells achieved through the formation of epitaxial growth of CdS/CuSbS₂ hetero-interface by post-annealing treatment. Progress in Photovoltaics: Research and Applications, 27(1), 37-43. https://hdl.handle.net/1783.1/122127

@article{12711edbbc4845f2b08e925c2fe0f872,

title = "High open-circuit voltage CuSbS2 solar cells achieved through the formation of epitaxial growth of CdS/CuSbS2 hetero-interface by post-annealing treatment",

abstract = "The earth-abundant and environmentally-friendly CuSbS2 solar cells have been struggling with low device performance, especially poor open circuit voltage (Voc). In this work, post-annealing treatment of the CuSbS2/CdS heterojunction performed on CuSbS2-based solar cells was firstly reported. With this treatment, we demonstrated CuSbS2 solar cells with a record Voc of 622 mV. The improvement of device performance was found peaked at 250°C post-annealing which mainly benefits from the significantly boosted open-circuit voltage and short-circuit current. The study of microstructure by high-resolution transmission electron microscopy revealed that such improvement could be attributed to the formation of epitaxial CuSbS2/CdS hetero-interface upon heat treatment, which reduces the interface defect density that may lead to reduced Voc deficit. Besides, results of photoluminescence and time-resolved photoluminescence measurements also indicated improved electrical properties of completed devices with higher photoluminescence intensity and longer minority carrier lifetime.",

keywords = "CuSbS, V deficit, epitaxy growth, post-annealing",

author = "Yuanfang Zhang and Jialiang Huang and Chang Yan and Kaiwen Sun and Xin Cui and Fangyang Liu and Ziheng Liu and Xueyun Zhang and Xu Liu and Stride, \{John A.\} and Green, \{Martin A.\} and Xiaojing Hao",

note = "Publisher Copyright: {\textcopyright} 2018 John Wiley \& Sons, Ltd.",

year = "2019",

month = jan,

language = "English",

volume = "27",

pages = "37--43",

journal = "Progress in Photovoltaics: Research and Applications",

issn = "1062-7995",

publisher = "John Wiley and Sons Ltd",

number = "1",

}

Zhang, Y, Huang, J, Yan, C, Sun, K, Cui, X, Liu, F, Liu, Z, Zhang, X, Liu, X, Stride, JA, Green, MA & Hao, X 2019, 'High open-circuit voltage CuSbS₂ solar cells achieved through the formation of epitaxial growth of CdS/CuSbS₂ hetero-interface by post-annealing treatment', Progress in Photovoltaics: Research and Applications, vol. 27, no. 1, pp. 37-43. <https://hdl.handle.net/1783.1/122127>

High open-circuit voltage CuSbS₂ solar cells achieved through the formation of epitaxial growth of CdS/CuSbS₂ hetero-interface by post-annealing treatment. / Zhang, Yuanfang; Huang, Jialiang; Yan, Chang et al.
In: Progress in Photovoltaics: Research and Applications, Vol. 27, No. 1, 01.2019, p. 37-43.

Research output: Contribution to journal › Journal Article › peer-review

TY - JOUR

T1 - High open-circuit voltage CuSbS2 solar cells achieved through the formation of epitaxial growth of CdS/CuSbS2 hetero-interface by post-annealing treatment

AU - Zhang, Yuanfang

AU - Huang, Jialiang

AU - Yan, Chang

AU - Sun, Kaiwen

AU - Cui, Xin

AU - Liu, Fangyang

AU - Liu, Ziheng

AU - Zhang, Xueyun

AU - Liu, Xu

AU - Stride, John A.

AU - Green, Martin A.

AU - Hao, Xiaojing

PY - 2019/1

Y1 - 2019/1

N2 - The earth-abundant and environmentally-friendly CuSbS2 solar cells have been struggling with low device performance, especially poor open circuit voltage (Voc). In this work, post-annealing treatment of the CuSbS2/CdS heterojunction performed on CuSbS2-based solar cells was firstly reported. With this treatment, we demonstrated CuSbS2 solar cells with a record Voc of 622 mV. The improvement of device performance was found peaked at 250°C post-annealing which mainly benefits from the significantly boosted open-circuit voltage and short-circuit current. The study of microstructure by high-resolution transmission electron microscopy revealed that such improvement could be attributed to the formation of epitaxial CuSbS2/CdS hetero-interface upon heat treatment, which reduces the interface defect density that may lead to reduced Voc deficit. Besides, results of photoluminescence and time-resolved photoluminescence measurements also indicated improved electrical properties of completed devices with higher photoluminescence intensity and longer minority carrier lifetime.

AB - The earth-abundant and environmentally-friendly CuSbS2 solar cells have been struggling with low device performance, especially poor open circuit voltage (Voc). In this work, post-annealing treatment of the CuSbS2/CdS heterojunction performed on CuSbS2-based solar cells was firstly reported. With this treatment, we demonstrated CuSbS2 solar cells with a record Voc of 622 mV. The improvement of device performance was found peaked at 250°C post-annealing which mainly benefits from the significantly boosted open-circuit voltage and short-circuit current. The study of microstructure by high-resolution transmission electron microscopy revealed that such improvement could be attributed to the formation of epitaxial CuSbS2/CdS hetero-interface upon heat treatment, which reduces the interface defect density that may lead to reduced Voc deficit. Besides, results of photoluminescence and time-resolved photoluminescence measurements also indicated improved electrical properties of completed devices with higher photoluminescence intensity and longer minority carrier lifetime.

KW - CuSbS

KW - V deficit

KW - epitaxy growth

KW - post-annealing

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000454289700005

UR - https://openalex.org/W2884712364

M3 - Journal Article

SN - 1062-7995

VL - 27

SP - 37

EP - 43

JO - Progress in Photovoltaics: Research and Applications

JF - Progress in Photovoltaics: Research and Applications

IS - 1

ER -