High-Performance Amorphous Zinc-Tin-Oxide Thin-Film Transistors with Low Tin Concentration

Shufeng Weng; Rongsheng Chen; Wei Zhong; Sunbin Deng; Guijun Li; Fion Sze Yan Yeung; Linfeng Lan; Zhijian Chen; Hoi Sing Kwok

doi:10.1109/JEDS.2019.2919424

High-Performance Amorphous Zinc-Tin-Oxide Thin-Film Transistors with Low Tin Concentration

Shufeng Weng, Rongsheng Chen^*, Wei Zhong, Sunbin Deng, Guijun Li, Fion Sze Yan Yeung, Linfeng Lan, Zhijian Chen, Hoi Sing Kwok

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Journal Article › peer-review

12 Citations (Scopus)

Abstract

In this paper, we present thin-film transistors (TFTs) with a zinc-tin-oxide (ZTO) layer achieved through magnetron co-sputtering. Amorphous ZTO TFTs with an Sn concentration of 2.49%, 6.95%, 7.11%, 11.95%, and 16.47% were fabricated, to investigate the effect of low-doped Sn. With a doping of 2.49% Sn, the electrical characteristics of TFTs can be obviously improved. After annealing at 440 °C, the optimal TFTs displayed a field-effect mobility of 8.71 cm²/V_s, a high I_on/off ratio of over 10⁸, a subthreshold swing of 0.17 V/decade, and a turn-on voltage of-0.4 V, even with an Sn concentration of only 11.95%. Meanwhile, the shift of turn-on voltage under negative gate bias stress was only-0.4 V.

Original language	English
Article number	8723443
Pages (from-to)	632-637
Number of pages	6
Journal	IEEE Journal of the Electron Devices Society
Volume	7
DOIs	https://doi.org/10.1109/JEDS.2019.2919424
Publication status	Published - 2019

Bibliographical note

Publisher Copyright:
© 2013 IEEE.

Keywords

Sputtering
thin-film transistor (TFT)
zinc tin oxide (ZTO)

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10.1109/JEDS.2019.2919424

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@article{43518af51c1a4a8484dc39e4e0b51f06,

title = "High-Performance Amorphous Zinc-Tin-Oxide Thin-Film Transistors with Low Tin Concentration",

abstract = "In this paper, we present thin-film transistors (TFTs) with a zinc-tin-oxide (ZTO) layer achieved through magnetron co-sputtering. Amorphous ZTO TFTs with an Sn concentration of 2.49\%, 6.95\%, 7.11\%, 11.95\%, and 16.47\% were fabricated, to investigate the effect of low-doped Sn. With a doping of 2.49\% Sn, the electrical characteristics of TFTs can be obviously improved. After annealing at 440 °C, the optimal TFTs displayed a field-effect mobility of 8.71 cm2/Vs, a high Ion/off ratio of over 108, a subthreshold swing of 0.17 V/decade, and a turn-on voltage of-0.4 V, even with an Sn concentration of only 11.95\%. Meanwhile, the shift of turn-on voltage under negative gate bias stress was only-0.4 V.",

keywords = "Sputtering, thin-film transistor (TFT), zinc tin oxide (ZTO)",

author = "Shufeng Weng and Rongsheng Chen and Wei Zhong and Sunbin Deng and Guijun Li and Yeung, \{Fion Sze Yan\} and Linfeng Lan and Zhijian Chen and Kwok, \{Hoi Sing\}",

note = "Publisher Copyright: {\textcopyright} 2013 IEEE.",

year = "2019",

doi = "10.1109/JEDS.2019.2919424",

language = "English",

volume = "7",

pages = "632--637",

journal = "IEEE Journal of the Electron Devices Society",

issn = "2168-6734",

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TY - JOUR

T1 - High-Performance Amorphous Zinc-Tin-Oxide Thin-Film Transistors with Low Tin Concentration

AU - Weng, Shufeng

AU - Chen, Rongsheng

AU - Zhong, Wei

AU - Deng, Sunbin

AU - Li, Guijun

AU - Yeung, Fion Sze Yan

AU - Lan, Linfeng

AU - Chen, Zhijian

AU - Kwok, Hoi Sing

PY - 2019

Y1 - 2019

N2 - In this paper, we present thin-film transistors (TFTs) with a zinc-tin-oxide (ZTO) layer achieved through magnetron co-sputtering. Amorphous ZTO TFTs with an Sn concentration of 2.49%, 6.95%, 7.11%, 11.95%, and 16.47% were fabricated, to investigate the effect of low-doped Sn. With a doping of 2.49% Sn, the electrical characteristics of TFTs can be obviously improved. After annealing at 440 °C, the optimal TFTs displayed a field-effect mobility of 8.71 cm2/Vs, a high Ion/off ratio of over 108, a subthreshold swing of 0.17 V/decade, and a turn-on voltage of-0.4 V, even with an Sn concentration of only 11.95%. Meanwhile, the shift of turn-on voltage under negative gate bias stress was only-0.4 V.

AB - In this paper, we present thin-film transistors (TFTs) with a zinc-tin-oxide (ZTO) layer achieved through magnetron co-sputtering. Amorphous ZTO TFTs with an Sn concentration of 2.49%, 6.95%, 7.11%, 11.95%, and 16.47% were fabricated, to investigate the effect of low-doped Sn. With a doping of 2.49% Sn, the electrical characteristics of TFTs can be obviously improved. After annealing at 440 °C, the optimal TFTs displayed a field-effect mobility of 8.71 cm2/Vs, a high Ion/off ratio of over 108, a subthreshold swing of 0.17 V/decade, and a turn-on voltage of-0.4 V, even with an Sn concentration of only 11.95%. Meanwhile, the shift of turn-on voltage under negative gate bias stress was only-0.4 V.

KW - Sputtering

KW - thin-film transistor (TFT)

KW - zinc tin oxide (ZTO)

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000471108100004

UR - https://openalex.org/W2947787515

UR - https://www.scopus.com/pages/publications/85067131613

U2 - 10.1109/JEDS.2019.2919424

DO - 10.1109/JEDS.2019.2919424

M3 - Journal Article

SN - 2168-6734

VL - 7

SP - 632

EP - 637

JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

M1 - 8723443

ER -

High-Performance Amorphous Zinc-Tin-Oxide Thin-Film Transistors with Low Tin Concentration

Abstract

Bibliographical note

Keywords

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