High Performance MoS2 N-Channel MOSFETs

Xiwen Liu; Zichao Ma; Mansun Chan; Wugang Liao; Lining Zhang

doi:10.1109/ISNE.2019.8896506

High Performance MoS₂ N-Channel MOSFETs

Xiwen Liu, Zichao Ma, Mansun Chan, Wugang Liao, Lining Zhang

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

Abstract

In this paper, we have demonstrated high performance back-gated MoS₂ MOSFETs with scandium (Sc) contact and high-k ZrO₂ dielectrics for improved contact resistance and electron mobility. Record drain current of 200 μA/μm has been achieved for 1-μm channel length multilayer MoS₂ MOSFETs on ZrO₂/Si substrates. The intrinsic contact resistance of low work function metal Sc on exfoliated MoS₂ with strong gating effect on source region is significantly decreased to 0.9 kΩμm. By taking the impact of contact resistance into consideration, the intrinsic mobility extracted from Y function technique is 132 cm²/Vs, 3 times higher than SiO₂ substrate, originating from the significant screening effect of high-k ZrO₂ dielectrics on the impurity scattering.

Original language	English
Title of host publication	2019 8th International Symposium on Next Generation Electronics, ISNE 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728120621
DOIs	https://doi.org/10.1109/ISNE.2019.8896506
Publication status	Published - Oct 2019
Event	8th International Symposium on Next Generation Electronics, ISNE 2019 - Zhengzhou, China Duration: 9 Oct 2019 → 10 Oct 2019

Publication series

Name	2019 8th International Symposium on Next Generation Electronics, ISNE 2019

Conference

Conference	8th International Symposium on Next Generation Electronics, ISNE 2019
Country/Territory	China
City	Zhengzhou
Period	9/10/19 → 10/10/19

Bibliographical note

Publisher Copyright:
© 2019 IEEE.

Keywords

2D MOSFETs
MoS2
Two-dimensional (2D)
high performance

Access to Document

10.1109/ISNE.2019.8896506

Cite this

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title = "High Performance MoS2 N-Channel MOSFETs",

abstract = "In this paper, we have demonstrated high performance back-gated MoS2 MOSFETs with scandium (Sc) contact and high-k ZrO2 dielectrics for improved contact resistance and electron mobility. Record drain current of 200 μA/μm has been achieved for 1-μm channel length multilayer MoS2 MOSFETs on ZrO2/Si substrates. The intrinsic contact resistance of low work function metal Sc on exfoliated MoS2 with strong gating effect on source region is significantly decreased to 0.9 kΩμm. By taking the impact of contact resistance into consideration, the intrinsic mobility extracted from Y function technique is 132 cm2/Vs, 3 times higher than SiO2 substrate, originating from the significant screening effect of high-k ZrO2 dielectrics on the impurity scattering.",

keywords = "2D MOSFETs, MoS2, Two-dimensional (2D), high performance",

author = "Xiwen Liu and Zichao Ma and Mansun Chan and Wugang Liao and Lining Zhang",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 8th International Symposium on Next Generation Electronics, ISNE 2019 ; Conference date: 09-10-2019 Through 10-10-2019",

year = "2019",

month = oct,

doi = "10.1109/ISNE.2019.8896506",

language = "English",

series = "2019 8th International Symposium on Next Generation Electronics, ISNE 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2019 8th International Symposium on Next Generation Electronics, ISNE 2019",

}

Liu, X, Ma, Z, Chan, M, Liao, W & Zhang, L 2019, High Performance MoS₂ N-Channel MOSFETs. in 2019 8th International Symposium on Next Generation Electronics, ISNE 2019., 8896506, 2019 8th International Symposium on Next Generation Electronics, ISNE 2019, Institute of Electrical and Electronics Engineers Inc., 8th International Symposium on Next Generation Electronics, ISNE 2019, Zhengzhou, China, 9/10/19. https://doi.org/10.1109/ISNE.2019.8896506

High Performance MoS₂ N-Channel MOSFETs. / Liu, Xiwen; Ma, Zichao; Chan, Mansun et al.
2019 8th International Symposium on Next Generation Electronics, ISNE 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8896506 (2019 8th International Symposium on Next Generation Electronics, ISNE 2019).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

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N2 - In this paper, we have demonstrated high performance back-gated MoS2 MOSFETs with scandium (Sc) contact and high-k ZrO2 dielectrics for improved contact resistance and electron mobility. Record drain current of 200 μA/μm has been achieved for 1-μm channel length multilayer MoS2 MOSFETs on ZrO2/Si substrates. The intrinsic contact resistance of low work function metal Sc on exfoliated MoS2 with strong gating effect on source region is significantly decreased to 0.9 kΩμm. By taking the impact of contact resistance into consideration, the intrinsic mobility extracted from Y function technique is 132 cm2/Vs, 3 times higher than SiO2 substrate, originating from the significant screening effect of high-k ZrO2 dielectrics on the impurity scattering.

AB - In this paper, we have demonstrated high performance back-gated MoS2 MOSFETs with scandium (Sc) contact and high-k ZrO2 dielectrics for improved contact resistance and electron mobility. Record drain current of 200 μA/μm has been achieved for 1-μm channel length multilayer MoS2 MOSFETs on ZrO2/Si substrates. The intrinsic contact resistance of low work function metal Sc on exfoliated MoS2 with strong gating effect on source region is significantly decreased to 0.9 kΩμm. By taking the impact of contact resistance into consideration, the intrinsic mobility extracted from Y function technique is 132 cm2/Vs, 3 times higher than SiO2 substrate, originating from the significant screening effect of high-k ZrO2 dielectrics on the impurity scattering.

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