High responsivity photo-sensor using gate-body tied SOI MOSFET

Weiquan Zhang; Mansun Chan; Ru Huang; Ping K. Ko

High responsivity photo-sensor using gate-body tied SOI MOSFET

Weiquan Zhang^*, Mansun Chan, Ru Huang, Ping K. Ko

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to conference › Conference Paper › peer-review

1 Citation (Scopus)

Abstract

The performance of a gate-body tied silicon-on-insulator (SOI) MOSFET optical sensor fabricated with a dynamic threshold MOSFET (DTMOSFET) process is investigated. With a dimension of 5 μm width by 2 μm length, the optical current generated is in the order of micro-ampere, which can be directly readout for processing. The optical current can be further increased by reducing the channel length, thus reduction and performance enhancement can be achieved at the same time.

Original language	English
Pages	149-150
Number of pages	2
Publication status	Published - 1998
Event	Proceedings of the 1998 IEEE International SOI Conference - Stuart, FL, USA Duration: 5 Oct 1998 → 8 Oct 1998

Conference

Conference	Proceedings of the 1998 IEEE International SOI Conference
City	Stuart, FL, USA
Period	5/10/98 → 8/10/98

Cite this

@conference{18521463c9e84833a10c1c60ee749b25,

title = "High responsivity photo-sensor using gate-body tied SOI MOSFET",

abstract = "The performance of a gate-body tied silicon-on-insulator (SOI) MOSFET optical sensor fabricated with a dynamic threshold MOSFET (DTMOSFET) process is investigated. With a dimension of 5 μm width by 2 μm length, the optical current generated is in the order of micro-ampere, which can be directly readout for processing. The optical current can be further increased by reducing the channel length, thus reduction and performance enhancement can be achieved at the same time.",

author = "Weiquan Zhang and Mansun Chan and Ru Huang and Ko, \{Ping K.\}",

year = "1998",

language = "English",

pages = "149--150",

note = "Proceedings of the 1998 IEEE International SOI Conference ; Conference date: 05-10-1998 Through 08-10-1998",

}

TY - CONF

T1 - High responsivity photo-sensor using gate-body tied SOI MOSFET

AU - Zhang, Weiquan

AU - Chan, Mansun

AU - Huang, Ru

AU - Ko, Ping K.

PY - 1998

Y1 - 1998

N2 - The performance of a gate-body tied silicon-on-insulator (SOI) MOSFET optical sensor fabricated with a dynamic threshold MOSFET (DTMOSFET) process is investigated. With a dimension of 5 μm width by 2 μm length, the optical current generated is in the order of micro-ampere, which can be directly readout for processing. The optical current can be further increased by reducing the channel length, thus reduction and performance enhancement can be achieved at the same time.

AB - The performance of a gate-body tied silicon-on-insulator (SOI) MOSFET optical sensor fabricated with a dynamic threshold MOSFET (DTMOSFET) process is investigated. With a dimension of 5 μm width by 2 μm length, the optical current generated is in the order of micro-ampere, which can be directly readout for processing. The optical current can be further increased by reducing the channel length, thus reduction and performance enhancement can be achieved at the same time.

UR - https://www.scopus.com/pages/publications/0032314026

M3 - Conference Paper

AN - SCOPUS:0032314026

SP - 149

EP - 150

T2 - Proceedings of the 1998 IEEE International SOI Conference

Y2 - 5 October 1998 through 8 October 1998

ER -

High responsivity photo-sensor using gate-body tied SOI MOSFET

Abstract

Conference

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