High speed Si-waveguide coupled III-V photodetectors selectively grown on SOI by lateral MOCVD

Ying Xue, Yu Han, Yi Wang, Jie Li, Jingyi Wang, Zunyue Zhang, Xinlun Cai, Hon Ki Tsang, Kei May Lau*

*Corresponding author for this work

Research output: Chapter in Book/Conference Proceeding/ReportConference Paper published in a bookpeer-review

Abstract

We report Si-waveguide coupled III-V photodetectors selectively grown on industry-standard (001)-oriented silicon-on-insulator (SOI) wafers by lateral organic chemical vapor deposition (MOCVD). A low dark current of 60 pA, responsivities of 0.4 A/W at 1.3 μm and 0.2 A/W at 1.5 μm, a 3 dB bandwidth over 52 GHz and data communication rate of 96 Gb/s with PAM4 and 80 Gb/s with OOK were achieved.

Original languageEnglish
Title of host publication2022 IEEE Photonics Conference, IPC 2022 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665434874
DOIs
Publication statusPublished - 2022
Event2022 IEEE Photonics Conference, IPC 2022 - Vancouver, Canada
Duration: 13 Nov 202217 Nov 2022

Publication series

Name2022 IEEE Photonics Conference, IPC 2022 - Proceedings

Conference

Conference2022 IEEE Photonics Conference, IPC 2022
Country/TerritoryCanada
CityVancouver
Period13/11/2217/11/22

Bibliographical note

Publisher Copyright:
© 2022 IEEE.

Keywords

  • high-speed
  • light coupling
  • monolithic integration

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