TY - JOUR
T1 - High voltage characteristics of resurfed Schottky injection FETs
AU - Sin, Johnny K.O.
AU - Salama, C. Andre T.
AU - Mukherjee, Satyen
AU - Rumennik, Vladimir
PY - 1989/4
Y1 - 1989/4
N2 - The design, fabrication, and characterization of high-voltage 'resurfed" Schottky INjection FETs (SINFET) are discussed in this paper. The devices are fabricated using a polysilicon gate LDMOS high voltage process, and have a forward breakdown voltage of 475 V and a current handling capability twice that of comparable conventional LDMOST. It was demonstrated that the high forward blocking capability of the resurfed SINFET does not degrade the fast switching characteristics, and that the tradeoff between the current handling capability and the forward blocking capability is similar to that of conventional LDMOS transistor.
AB - The design, fabrication, and characterization of high-voltage 'resurfed" Schottky INjection FETs (SINFET) are discussed in this paper. The devices are fabricated using a polysilicon gate LDMOS high voltage process, and have a forward breakdown voltage of 475 V and a current handling capability twice that of comparable conventional LDMOST. It was demonstrated that the high forward blocking capability of the resurfed SINFET does not degrade the fast switching characteristics, and that the tradeoff between the current handling capability and the forward blocking capability is similar to that of conventional LDMOS transistor.
UR - https://www.webofscience.com/wos/woscc/full-record/WOS:A1989U203600008
UR - https://www.scopus.com/pages/publications/0024650533
U2 - 10.1016/0038-1101(89)90082-8
DO - 10.1016/0038-1101(89)90082-8
M3 - Journal Article
SN - 0038-1101
VL - 32
SP - 317
EP - 322
JO - Solid-State Electronics
JF - Solid-State Electronics
IS - 4
ER -