Highly-sensitive and low power SOI lateral thyristive magnetometer

Jack Lau; Cuong T. Nguyen; Ping K. Ko; Philip C.H. Chan

Highly-sensitive and low power SOI lateral thyristive magnetometer

Jack Lau^*, Cuong T. Nguyen, Ping K. Ko, Philip C.H. Chan

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Conference article published in journal › peer-review

1 Citation (Scopus)

Abstract

We report here a lateral magnetometer fabricated on SOI using 6 masks. The sensor operates similar to a thyristor. With a supply voltage of 0.9 V and a total biasing current of 25 μA, the magnetometer achieves a relative sensitivity of 210%/Tesla and an absolute sensitivity of 105%/Tesla.

Original language	English
Pages (from-to)	143-146
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
Publication status	Published - 1994
Event	Proceedings of the 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: 11 Dec 1994 → 14 Dec 1994

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https://hdl.handle.net/1783.1/37888

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@article{4cda526eb6694b818970613527b6d1c5,

title = "Highly-sensitive and low power SOI lateral thyristive magnetometer",

abstract = "We report here a lateral magnetometer fabricated on SOI using 6 masks. The sensor operates similar to a thyristor. With a supply voltage of 0.9 V and a total biasing current of 25 μA, the magnetometer achieves a relative sensitivity of 210\%/Tesla and an absolute sensitivity of 105\%/Tesla.",

author = "Jack Lau and Nguyen, \{Cuong T.\} and Ko, \{Ping K.\} and Chan, \{Philip C.H.\}",

year = "1994",

language = "English",

pages = "143--146",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1994 IEEE International Electron Devices Meeting ; Conference date: 11-12-1994 Through 14-12-1994",

}

TY - JOUR

T1 - Highly-sensitive and low power SOI lateral thyristive magnetometer

AU - Lau, Jack

AU - Nguyen, Cuong T.

AU - Ko, Ping K.

AU - Chan, Philip C.H.

PY - 1994

Y1 - 1994

N2 - We report here a lateral magnetometer fabricated on SOI using 6 masks. The sensor operates similar to a thyristor. With a supply voltage of 0.9 V and a total biasing current of 25 μA, the magnetometer achieves a relative sensitivity of 210%/Tesla and an absolute sensitivity of 105%/Tesla.

AB - We report here a lateral magnetometer fabricated on SOI using 6 masks. The sensor operates similar to a thyristor. With a supply voltage of 0.9 V and a total biasing current of 25 μA, the magnetometer achieves a relative sensitivity of 210%/Tesla and an absolute sensitivity of 105%/Tesla.

UR - https://www.scopus.com/pages/publications/0028737904

M3 - Conference article published in journal

AN - SCOPUS:0028737904

SN - 0163-1918

SP - 143

EP - 146

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

T2 - Proceedings of the 1994 IEEE International Electron Devices Meeting

Y2 - 11 December 1994 through 14 December 1994

ER -

Highly-sensitive and low power SOI lateral thyristive magnetometer

Abstract

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