Highly sensitive photodetector using porous silicon

J. P. Zheng; K. L. Jiao; W. P. Shen; W. A. Anderson; H. S. Kwok

doi:10.1063/1.107884

Highly sensitive photodetector using porous silicon

J. P. Zheng^*, K. L. Jiao, W. P. Shen, W. A. Anderson, H. S. Kwok

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

197 Citations (Scopus)

Abstract

A highly sensitive photodetector was made with a metal-porous silicon junction. The spectral response was measured for the wavelength range from 400 nm to 1.075 μm. It was demonstrated that close to unity quantum efficiency could be obtained in the wavelength range of 630-900 nm without any antireflective coating. The detector response time was about 2 ns with a 9 V reverse bias. The possible mechanisms are discussed.

Original language	English
Pages (from-to)	459-461
Number of pages	3
Journal	Applied Physics Letters
Volume	61
Issue number	4
DOIs	https://doi.org/10.1063/1.107884
Publication status	Published - 1992
Externally published	Yes

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title = "Highly sensitive photodetector using porous silicon",

abstract = "A highly sensitive photodetector was made with a metal-porous silicon junction. The spectral response was measured for the wavelength range from 400 nm to 1.075 μm. It was demonstrated that close to unity quantum efficiency could be obtained in the wavelength range of 630-900 nm without any antireflective coating. The detector response time was about 2 ns with a 9 V reverse bias. The possible mechanisms are discussed.",

author = "Zheng, \{J. P.\} and Jiao, \{K. L.\} and Shen, \{W. P.\} and Anderson, \{W. A.\} and Kwok, \{H. S.\}",

year = "1992",

doi = "10.1063/1.107884",

language = "English",

volume = "61",

pages = "459--461",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "4",

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T1 - Highly sensitive photodetector using porous silicon

AU - Zheng, J. P.

AU - Jiao, K. L.

AU - Shen, W. P.

AU - Anderson, W. A.

AU - Kwok, H. S.

PY - 1992

Y1 - 1992

N2 - A highly sensitive photodetector was made with a metal-porous silicon junction. The spectral response was measured for the wavelength range from 400 nm to 1.075 μm. It was demonstrated that close to unity quantum efficiency could be obtained in the wavelength range of 630-900 nm without any antireflective coating. The detector response time was about 2 ns with a 9 V reverse bias. The possible mechanisms are discussed.

AB - A highly sensitive photodetector was made with a metal-porous silicon junction. The spectral response was measured for the wavelength range from 400 nm to 1.075 μm. It was demonstrated that close to unity quantum efficiency could be obtained in the wavelength range of 630-900 nm without any antireflective coating. The detector response time was about 2 ns with a 9 V reverse bias. The possible mechanisms are discussed.

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:A1992JE82100030

UR - https://openalex.org/W2057608684

UR - https://www.scopus.com/pages/publications/31644442415

U2 - 10.1063/1.107884

DO - 10.1063/1.107884

M3 - Journal Article

SN - 0003-6951

VL - 61

SP - 459

EP - 461

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Highly sensitive photodetector using porous silicon

Abstract

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