Highly transparent and conductive double-layer oxide thin films as anodes for organic light-emitting diodes

Yu Yang; Lian Wang; He Yan; Shu Jin; Tobin J. Marks; Shuyou Li

doi:10.1063/1.2240110

Highly transparent and conductive double-layer oxide thin films as anodes for organic light-emitting diodes

Yu Yang
, Lian Wang
, He Yan
, Shu Jin
, Tobin J. Marks^*
, Shuyou Li

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

73 Citations (Scopus)

Abstract

Double-layer transparent conducting oxide thin film structures containing In-doped CdO (CIO) and Sn-doped In ₂O ₃ (ITO) layers were grown on glass by metal-organic chemical vapor deposition and ion-assisted deposition (IAD), respectively, and used as anodes for polymer light-emitting diodes (PLEDs). These films have a very low overall In content of 16 at.%. For 180-nm-thick CIO/ITO films, the sheet resistance is 5.6 Ω/, and the average optical transmittance is 87.1% in the 400-700 nm region. The overall figure of merit (Φ=T ¹⁰/R _sheet) of the double-layer CIO/ITO films is significantly greater than that of single-layer CIO, IAD-ITO, and commercial ITO films. CIO/ITO-based PLEDs exhibit comparable or superior device performance versus ITO-based control devices. CIO/ITO materials have a much lower sheet resistance than ITO, rendering them promising low In content electrode materials for large-area optoelectronic devices.

Original language	English
Article number	051116
Journal	Applied Physics Letters
Volume	89
Issue number	5
DOIs	https://doi.org/10.1063/1.2240110
Publication status	Published - 2006
Externally published	Yes

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10.1063/1.2240110

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@article{b5e28205da82444d92987d2e4e74114e,

title = "Highly transparent and conductive double-layer oxide thin films as anodes for organic light-emitting diodes",

abstract = "Double-layer transparent conducting oxide thin film structures containing In-doped CdO (CIO) and Sn-doped In 2O 3 (ITO) layers were grown on glass by metal-organic chemical vapor deposition and ion-assisted deposition (IAD), respectively, and used as anodes for polymer light-emitting diodes (PLEDs). These films have a very low overall In content of 16 at.\%. For 180-nm-thick CIO/ITO films, the sheet resistance is 5.6 Ω/, and the average optical transmittance is 87.1\% in the 400-700 nm region. The overall figure of merit (Φ=T 10/R sheet) of the double-layer CIO/ITO films is significantly greater than that of single-layer CIO, IAD-ITO, and commercial ITO films. CIO/ITO-based PLEDs exhibit comparable or superior device performance versus ITO-based control devices. CIO/ITO materials have a much lower sheet resistance than ITO, rendering them promising low In content electrode materials for large-area optoelectronic devices.",

author = "Yu Yang and Lian Wang and He Yan and Shu Jin and Marks, \{Tobin J.\} and Shuyou Li",

year = "2006",

doi = "10.1063/1.2240110",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "5",

}

TY - JOUR

T1 - Highly transparent and conductive double-layer oxide thin films as anodes for organic light-emitting diodes

AU - Yang, Yu

AU - Wang, Lian

AU - Yan, He

AU - Jin, Shu

AU - Marks, Tobin J.

AU - Li, Shuyou

PY - 2006

Y1 - 2006

N2 - Double-layer transparent conducting oxide thin film structures containing In-doped CdO (CIO) and Sn-doped In 2O 3 (ITO) layers were grown on glass by metal-organic chemical vapor deposition and ion-assisted deposition (IAD), respectively, and used as anodes for polymer light-emitting diodes (PLEDs). These films have a very low overall In content of 16 at.%. For 180-nm-thick CIO/ITO films, the sheet resistance is 5.6 Ω/, and the average optical transmittance is 87.1% in the 400-700 nm region. The overall figure of merit (Φ=T 10/R sheet) of the double-layer CIO/ITO films is significantly greater than that of single-layer CIO, IAD-ITO, and commercial ITO films. CIO/ITO-based PLEDs exhibit comparable or superior device performance versus ITO-based control devices. CIO/ITO materials have a much lower sheet resistance than ITO, rendering them promising low In content electrode materials for large-area optoelectronic devices.

AB - Double-layer transparent conducting oxide thin film structures containing In-doped CdO (CIO) and Sn-doped In 2O 3 (ITO) layers were grown on glass by metal-organic chemical vapor deposition and ion-assisted deposition (IAD), respectively, and used as anodes for polymer light-emitting diodes (PLEDs). These films have a very low overall In content of 16 at.%. For 180-nm-thick CIO/ITO films, the sheet resistance is 5.6 Ω/, and the average optical transmittance is 87.1% in the 400-700 nm region. The overall figure of merit (Φ=T 10/R sheet) of the double-layer CIO/ITO films is significantly greater than that of single-layer CIO, IAD-ITO, and commercial ITO films. CIO/ITO-based PLEDs exhibit comparable or superior device performance versus ITO-based control devices. CIO/ITO materials have a much lower sheet resistance than ITO, rendering them promising low In content electrode materials for large-area optoelectronic devices.

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000239520200016

UR - https://openalex.org/W2055279486

U2 - 10.1063/1.2240110

DO - 10.1063/1.2240110

M3 - Journal Article

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 051116

ER -

Highly transparent and conductive double-layer oxide thin films as anodes for organic light-emitting diodes

Abstract

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