Hot carrier induced leakage current instability in metal induced laterally crystallized n-type poly-silicon thin film transistors

Zhen Zhu; Mingxiang Wang; Dongli Zhang; Man Wong

doi:10.1109/ICSICT.2006.306702

Hot carrier induced leakage current instability in metal induced laterally crystallized n-type poly-silicon thin film transistors

Zhen Zhu^*
, Mingxiang Wang
, Dongli Zhang
, Man Wong

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

3 Citations (Scopus)

Abstract

Field enhanced leakage current characteristics of metal induced laterally crystallized polycrystalline silicon thin film transistors (poly-Si TFTs) under hot carrier (HC) stress are investigated, in both forward and reverse measurement mode, with varied stress gate/drain voltages and stress times. Degradation behaviors can be understood by the effect of HC stress on drain electrical field and on bulk poly-Si channel resistance.

Original language	English
Title of host publication	ICSICT-2006
Subtitle of host publication	2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Publisher	IEEE Computer Society
Pages	1129-1131
Number of pages	3
ISBN (Print)	1424401615, 9781424401611
DOIs	https://doi.org/10.1109/ICSICT.2006.306702
Publication status	Published - 2006
Event	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China Duration: 23 Oct 2006 → 26 Oct 2006

Publication series

Name	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

Conference	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
Country/Territory	China
City	Shanghai
Period	23/10/06 → 26/10/06

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10.1109/ICSICT.2006.306702

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Zhu, Z., Wang, M., Zhang, D., & Wong, M. (2006). Hot carrier induced leakage current instability in metal induced laterally crystallized n-type poly-silicon thin film transistors. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 1129-1131). Article 4098343 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). IEEE Computer Society. https://doi.org/10.1109/ICSICT.2006.306702

Zhu, Zhen ; Wang, Mingxiang ; Zhang, Dongli et al. / Hot carrier induced leakage current instability in metal induced laterally crystallized n-type poly-silicon thin film transistors. ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society, 2006. pp. 1129-1131 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

@inproceedings{53de855ae3c04bec951535bfd831e31c,

title = "Hot carrier induced leakage current instability in metal induced laterally crystallized n-type poly-silicon thin film transistors",

abstract = "Field enhanced leakage current characteristics of metal induced laterally crystallized polycrystalline silicon thin film transistors (poly-Si TFTs) under hot carrier (HC) stress are investigated, in both forward and reverse measurement mode, with varied stress gate/drain voltages and stress times. Degradation behaviors can be understood by the effect of HC stress on drain electrical field and on bulk poly-Si channel resistance.",

author = "Zhen Zhu and Mingxiang Wang and Dongli Zhang and Man Wong",

year = "2006",

doi = "10.1109/ICSICT.2006.306702",

language = "English",

isbn = "1424401615",

series = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

publisher = "IEEE Computer Society",

pages = "1129--1131",

booktitle = "ICSICT-2006",

note = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 23-10-2006 Through 26-10-2006",

}

Zhu, Z, Wang, M, Zhang, D & Wong, M 2006, Hot carrier induced leakage current instability in metal induced laterally crystallized n-type poly-silicon thin film transistors. in ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 4098343, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, IEEE Computer Society, pp. 1129-1131, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 23/10/06. https://doi.org/10.1109/ICSICT.2006.306702

Hot carrier induced leakage current instability in metal induced laterally crystallized n-type poly-silicon thin film transistors. / Zhu, Zhen; Wang, Mingxiang; Zhang, Dongli et al.
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society, 2006. p. 1129-1131 4098343 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Hot carrier induced leakage current instability in metal induced laterally crystallized n-type poly-silicon thin film transistors

AU - Zhu, Zhen

AU - Wang, Mingxiang

AU - Zhang, Dongli

AU - Wong, Man

PY - 2006

Y1 - 2006

N2 - Field enhanced leakage current characteristics of metal induced laterally crystallized polycrystalline silicon thin film transistors (poly-Si TFTs) under hot carrier (HC) stress are investigated, in both forward and reverse measurement mode, with varied stress gate/drain voltages and stress times. Degradation behaviors can be understood by the effect of HC stress on drain electrical field and on bulk poly-Si channel resistance.

AB - Field enhanced leakage current characteristics of metal induced laterally crystallized polycrystalline silicon thin film transistors (poly-Si TFTs) under hot carrier (HC) stress are investigated, in both forward and reverse measurement mode, with varied stress gate/drain voltages and stress times. Degradation behaviors can be understood by the effect of HC stress on drain electrical field and on bulk poly-Si channel resistance.

UR - https://openalex.org/W2013738238

U2 - 10.1109/ICSICT.2006.306702

DO - 10.1109/ICSICT.2006.306702

M3 - Conference Paper published in a book

SN - 1424401615

SN - 9781424401611

T3 - ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

SP - 1129

EP - 1131

BT - ICSICT-2006

PB - IEEE Computer Society

T2 - ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology

Y2 - 23 October 2006 through 26 October 2006

ER -

Zhu Z, Wang M, Zhang D, Wong M. Hot carrier induced leakage current instability in metal induced laterally crystallized n-type poly-silicon thin film transistors. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society. 2006. p. 1129-1131. 4098343. (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). doi: 10.1109/ICSICT.2006.306702

Hot carrier induced leakage current instability in metal induced laterally crystallized n-type poly-silicon thin film transistors

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