Hot-Carrier-Induced MOSFET Degradation Under AC Stress

J. Y. Choi; P. K. Ko; Chenming Hu

doi:10.1109/EDL.1987.26650

Hot-Carrier-Induced MOSFET Degradation Under AC Stress

J. Y. Choi, P. K. Ko, Chenming Hu

Research output: Contribution to journal › Journal Article › peer-review

53 Citations (Scopus)

Abstract

The effects of gate and drain voltage waveforms on the hotcarrier-induced MOSFET degradation are studied. Drain voltage transients have little effect on the degradation rate. Only the falling edge of the gate pulse in the presence of a high drain voltage enhances the degradation rate. For devices in typical inverter circuits, dc stress results together with the substrate current waveform can predict the degradation rate under ac stress for a wide range of rise and delay times.

Original language	English
Pages (from-to)	333-335
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	8
Issue number	8
DOIs	https://doi.org/10.1109/EDL.1987.26650
Publication status	Published - Aug 1987
Externally published	Yes

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10.1109/EDL.1987.26650

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title = "Hot-Carrier-Induced MOSFET Degradation Under AC Stress",

abstract = "The effects of gate and drain voltage waveforms on the hotcarrier-induced MOSFET degradation are studied. Drain voltage transients have little effect on the degradation rate. Only the falling edge of the gate pulse in the presence of a high drain voltage enhances the degradation rate. For devices in typical inverter circuits, dc stress results together with the substrate current waveform can predict the degradation rate under ac stress for a wide range of rise and delay times.",

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N2 - The effects of gate and drain voltage waveforms on the hotcarrier-induced MOSFET degradation are studied. Drain voltage transients have little effect on the degradation rate. Only the falling edge of the gate pulse in the presence of a high drain voltage enhances the degradation rate. For devices in typical inverter circuits, dc stress results together with the substrate current waveform can predict the degradation rate under ac stress for a wide range of rise and delay times.

AB - The effects of gate and drain voltage waveforms on the hotcarrier-induced MOSFET degradation are studied. Drain voltage transients have little effect on the degradation rate. Only the falling edge of the gate pulse in the presence of a high drain voltage enhances the degradation rate. For devices in typical inverter circuits, dc stress results together with the substrate current waveform can predict the degradation rate under ac stress for a wide range of rise and delay times.

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Hot-Carrier-Induced MOSFET Degradation Under AC Stress

Abstract

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