Hot carrier relaxation processes in GaAs-GaAlAs multiple quantum well structures

Zhongying Xu; Yuzhang Li; Jizong Xu; Baozhen Zheng; Junying Xu; Weihua Zhuang; Weikun Ge

doi:10.1016/0022-2313(88)90341-9

Hot carrier relaxation processes in GaAs-GaAlAs multiple quantum well structures

Zhongying Xu^*, Yuzhang Li, Jizong Xu, Baozhen Zheng, Junying Xu, Weihua Zhuang, Weikun Ge

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

2 Citations (Scopus)

Abstract

Based on the nonlinear luminescence correlation technique, a new time resolved spectroscopy technique has been developed and applied to the study of hot carrier relaxation processes in GaAs-GaAlAs multiple quantum well structures. We have found that the well width has a significant effect on the relaxation processes. For a sample with L_Z=40 Å, the time constant of the LO-phonon relaxation is found to be as long as 42 ps.

Original language	English
Pages (from-to)	585-586
Number of pages	2
Journal	Journal of Luminescence
Volume	40-41
Issue number	C
DOIs	https://doi.org/10.1016/0022-2313(88)90341-9
Publication status	Published - Feb 1988
Externally published	Yes

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10.1016/0022-2313(88)90341-9

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title = "Hot carrier relaxation processes in GaAs-GaAlAs multiple quantum well structures",

abstract = "Based on the nonlinear luminescence correlation technique, a new time resolved spectroscopy technique has been developed and applied to the study of hot carrier relaxation processes in GaAs-GaAlAs multiple quantum well structures. We have found that the well width has a significant effect on the relaxation processes. For a sample with LZ=40 {\AA}, the time constant of the LO-phonon relaxation is found to be as long as 42 ps.",

author = "Zhongying Xu and Yuzhang Li and Jizong Xu and Baozhen Zheng and Junying Xu and Weihua Zhuang and Weikun Ge",

year = "1988",

month = feb,

doi = "10.1016/0022-2313(88)90341-9",

language = "English",

volume = "40-41",

pages = "585--586",

journal = "Journal of Luminescence",

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TY - JOUR

T1 - Hot carrier relaxation processes in GaAs-GaAlAs multiple quantum well structures

AU - Xu, Zhongying

AU - Li, Yuzhang

AU - Xu, Jizong

AU - Zheng, Baozhen

AU - Xu, Junying

AU - Zhuang, Weihua

AU - Ge, Weikun

PY - 1988/2

Y1 - 1988/2

N2 - Based on the nonlinear luminescence correlation technique, a new time resolved spectroscopy technique has been developed and applied to the study of hot carrier relaxation processes in GaAs-GaAlAs multiple quantum well structures. We have found that the well width has a significant effect on the relaxation processes. For a sample with LZ=40 Å, the time constant of the LO-phonon relaxation is found to be as long as 42 ps.

AB - Based on the nonlinear luminescence correlation technique, a new time resolved spectroscopy technique has been developed and applied to the study of hot carrier relaxation processes in GaAs-GaAlAs multiple quantum well structures. We have found that the well width has a significant effect on the relaxation processes. For a sample with LZ=40 Å, the time constant of the LO-phonon relaxation is found to be as long as 42 ps.

UR - http://www.scopus.com/inward/record.url?scp=0023291238&partnerID=8YFLogxK

U2 - 10.1016/0022-2313(88)90341-9

DO - 10.1016/0022-2313(88)90341-9

M3 - Journal Article

AN - SCOPUS:0023291238

SN - 0022-2313

VL - 40-41

SP - 585

EP - 586

JO - Journal of Luminescence

JF - Journal of Luminescence

IS - C

ER -

Hot carrier relaxation processes in GaAs-GaAlAs multiple quantum well structures

Abstract

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