Hydrogen passivation for the performance enhancement of poly-Si crystallized by double-frequency YAG laser

Juan Li; Si wei Ding; Ying Yao; Chong Luo; Zhi guo Meng; Chun ya Wu; Shao zhen Xiong; Zhi lin Zhang; Hoi sing Kwok

doi:10.1007/s11801-010-0040-5

Hydrogen passivation for the performance enhancement of poly-Si crystallized by double-frequency YAG laser

Juan Li^*, Si wei Ding, Ying Yao, Chong Luo, Zhi guo Meng, Chun ya Wu, Shao zhen Xiong, Zhi lin Zhang, Hoi sing Kwok

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Journal Article › peer-review

1 Citation (Scopus)

Abstract

The hydrogen passivation is adopted to enhance the performance of poly-Si crystallized by YAG laser annealing (LA poly-Si). The effects of passivation time, passivation power and passivation temperature on the hall mobility of the LA poly-Si are investigated and the mechanism of the hydrogen passivation is preliminarily analyzed. It is found that the effect of the hydrogen passivation on the qulity of YAG laser annealed poly-Si is also correlated with the deposition method and the defect type in it.

Original language	English
Pages (from-to)	288-290
Number of pages	3
Journal	Optoelectronics Letters
Volume	6
Issue number	4
DOIs	https://doi.org/10.1007/s11801-010-0040-5
Publication status	Published - 2010

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title = "Hydrogen passivation for the performance enhancement of poly-Si crystallized by double-frequency YAG laser",

abstract = "The hydrogen passivation is adopted to enhance the performance of poly-Si crystallized by YAG laser annealing (LA poly-Si). The effects of passivation time, passivation power and passivation temperature on the hall mobility of the LA poly-Si are investigated and the mechanism of the hydrogen passivation is preliminarily analyzed. It is found that the effect of the hydrogen passivation on the qulity of YAG laser annealed poly-Si is also correlated with the deposition method and the defect type in it.",

author = "Juan Li and Ding, \{Si wei\} and Ying Yao and Chong Luo and Meng, \{Zhi guo\} and Wu, \{Chun ya\} and Xiong, \{Shao zhen\} and Zhang, \{Zhi lin\} and Kwok, \{Hoi sing\}",

year = "2010",

doi = "10.1007/s11801-010-0040-5",

language = "English",

volume = "6",

pages = "288--290",

journal = "Optoelectronics Letters",

issn = "1673-1905",

publisher = "Springer Verlag",

number = "4",

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TY - JOUR

T1 - Hydrogen passivation for the performance enhancement of poly-Si crystallized by double-frequency YAG laser

AU - Li, Juan

AU - Ding, Si wei

AU - Yao, Ying

AU - Luo, Chong

AU - Meng, Zhi guo

AU - Wu, Chun ya

AU - Xiong, Shao zhen

AU - Zhang, Zhi lin

AU - Kwok, Hoi sing

PY - 2010

Y1 - 2010

N2 - The hydrogen passivation is adopted to enhance the performance of poly-Si crystallized by YAG laser annealing (LA poly-Si). The effects of passivation time, passivation power and passivation temperature on the hall mobility of the LA poly-Si are investigated and the mechanism of the hydrogen passivation is preliminarily analyzed. It is found that the effect of the hydrogen passivation on the qulity of YAG laser annealed poly-Si is also correlated with the deposition method and the defect type in it.

AB - The hydrogen passivation is adopted to enhance the performance of poly-Si crystallized by YAG laser annealing (LA poly-Si). The effects of passivation time, passivation power and passivation temperature on the hall mobility of the LA poly-Si are investigated and the mechanism of the hydrogen passivation is preliminarily analyzed. It is found that the effect of the hydrogen passivation on the qulity of YAG laser annealed poly-Si is also correlated with the deposition method and the defect type in it.

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000412738200014

UR - https://openalex.org/W1983136523

UR - https://www.scopus.com/pages/publications/77957981699

U2 - 10.1007/s11801-010-0040-5

DO - 10.1007/s11801-010-0040-5

M3 - Journal Article

SN - 1673-1905

VL - 6

SP - 288

EP - 290

JO - Optoelectronics Letters

JF - Optoelectronics Letters

IS - 4

ER -

Hydrogen passivation for the performance enhancement of poly-Si crystallized by double-frequency YAG laser

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