III–V Superlattices on InP/Si Metamorphic Buffer Layers for λ≈4.8 μm Quantum Cascade Lasers

Ayushi Rajeev; Bei Shi; Qiang Li; Jeremy D. Kirch; Micah Cheng; Aaron Tan; Honghyuk Kim; Kevin Oresick; Chris Sigler; Kei M. Lau; Thomas F. Kuech; Luke J. Mawst

doi:10.1002/pssa.201800493

III–V Superlattices on InP/Si Metamorphic Buffer Layers for λ≈4.8 μm Quantum Cascade Lasers

Ayushi Rajeev, Bei Shi, Qiang Li, Jeremy D. Kirch, Micah Cheng, Aaron Tan, Honghyuk Kim, Kevin Oresick, Chris Sigler, Kei M. Lau, Thomas F. Kuech, Luke J. Mawst^*

^*Corresponding author for this work

Division of Emerging Interdisciplinary Areas

Research output: Contribution to journal › Journal Article › peer-review

8 Citations (Scopus)

Abstract

Metalorganic chemical vapor deposition (MOCVD) growth of InP-based quantum cascade laser (QCL) structures on a Si (001) substrate is demonstrated by employing a metamorphic InP buffer layer with InAs/InP quantum dots as dislocation filters. Calibration samples consist of a strain-compensated 11.98 nm In_0.365Al_0.635As/14.8 nm In_0.64Ga_0.36As superlattice (SL) structure as well as 5-stages of the λ ≈ 4.8 µm QCL active region, which are grown atop the metamorphic buffer and are used to assess the structural properties of the SL through high-resolution X-ray diffraction and high-resolution transmission electron microscopy. Full QCL structures with 40-stage active region are fabricated into edge-emitting ridge-waveguide structures and demonstrate low temperature electroluminescence with a FWHM of 48.6 meV.

Original language	English
Article number	1800493
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	216
Issue number	1
DOIs	https://doi.org/10.1002/pssa.201800493
Publication status	Published - 9 Jan 2019

Bibliographical note

Publisher Copyright:
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Keywords

metalorganic chemical vapor deposition
metamorphic buffer layers
quantum cascade lasers
semiconducting III–V materials
superlattice

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10.1002/pssa.201800493

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Rajeev, A., Shi, B., Li, Q., Kirch, J. D., Cheng, M., Tan, A., Kim, H., Oresick, K., Sigler, C., Lau, K. M., Kuech, T. F., & Mawst, L. J. (2019). III–V Superlattices on InP/Si Metamorphic Buffer Layers for λ≈4.8 μm Quantum Cascade Lasers. Physica Status Solidi (A) Applications and Materials Science, 216(1), Article 1800493. https://doi.org/10.1002/pssa.201800493

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title = "III–V Superlattices on InP/Si Metamorphic Buffer Layers for λ≈4.8 μm Quantum Cascade Lasers",

abstract = "Metalorganic chemical vapor deposition (MOCVD) growth of InP-based quantum cascade laser (QCL) structures on a Si (001) substrate is demonstrated by employing a metamorphic InP buffer layer with InAs/InP quantum dots as dislocation filters. Calibration samples consist of a strain-compensated 11.98 nm In0.365Al0.635As/14.8 nm In0.64Ga0.36As superlattice (SL) structure as well as 5-stages of the λ ≈ 4.8 µm QCL active region, which are grown atop the metamorphic buffer and are used to assess the structural properties of the SL through high-resolution X-ray diffraction and high-resolution transmission electron microscopy. Full QCL structures with 40-stage active region are fabricated into edge-emitting ridge-waveguide structures and demonstrate low temperature electroluminescence with a FWHM of 48.6 meV.",

keywords = "metalorganic chemical vapor deposition, metamorphic buffer layers, quantum cascade lasers, semiconducting III–V materials, superlattice",

author = "Ayushi Rajeev and Bei Shi and Qiang Li and Kirch, \{Jeremy D.\} and Micah Cheng and Aaron Tan and Honghyuk Kim and Kevin Oresick and Chris Sigler and Lau, \{Kei M.\} and Kuech, \{Thomas F.\} and Mawst, \{Luke J.\}",

note = "Publisher Copyright: {\textcopyright} 2018 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim",

year = "2019",

month = jan,

day = "9",

doi = "10.1002/pssa.201800493",

language = "English",

volume = "216",

journal = "Physica Status Solidi (A) Applications and Materials Science",

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T1 - III–V Superlattices on InP/Si Metamorphic Buffer Layers for λ≈4.8 μm Quantum Cascade Lasers

AU - Rajeev, Ayushi

AU - Shi, Bei

AU - Li, Qiang

AU - Kirch, Jeremy D.

AU - Cheng, Micah

AU - Tan, Aaron

AU - Kim, Honghyuk

AU - Oresick, Kevin

AU - Sigler, Chris

AU - Lau, Kei M.

AU - Kuech, Thomas F.

AU - Mawst, Luke J.

PY - 2019/1/9

Y1 - 2019/1/9

N2 - Metalorganic chemical vapor deposition (MOCVD) growth of InP-based quantum cascade laser (QCL) structures on a Si (001) substrate is demonstrated by employing a metamorphic InP buffer layer with InAs/InP quantum dots as dislocation filters. Calibration samples consist of a strain-compensated 11.98 nm In0.365Al0.635As/14.8 nm In0.64Ga0.36As superlattice (SL) structure as well as 5-stages of the λ ≈ 4.8 µm QCL active region, which are grown atop the metamorphic buffer and are used to assess the structural properties of the SL through high-resolution X-ray diffraction and high-resolution transmission electron microscopy. Full QCL structures with 40-stage active region are fabricated into edge-emitting ridge-waveguide structures and demonstrate low temperature electroluminescence with a FWHM of 48.6 meV.

AB - Metalorganic chemical vapor deposition (MOCVD) growth of InP-based quantum cascade laser (QCL) structures on a Si (001) substrate is demonstrated by employing a metamorphic InP buffer layer with InAs/InP quantum dots as dislocation filters. Calibration samples consist of a strain-compensated 11.98 nm In0.365Al0.635As/14.8 nm In0.64Ga0.36As superlattice (SL) structure as well as 5-stages of the λ ≈ 4.8 µm QCL active region, which are grown atop the metamorphic buffer and are used to assess the structural properties of the SL through high-resolution X-ray diffraction and high-resolution transmission electron microscopy. Full QCL structures with 40-stage active region are fabricated into edge-emitting ridge-waveguide structures and demonstrate low temperature electroluminescence with a FWHM of 48.6 meV.

KW - metalorganic chemical vapor deposition

KW - metamorphic buffer layers

KW - quantum cascade lasers

KW - semiconducting III–V materials

KW - superlattice

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000455254300022

UR - https://openalex.org/W2896421899

UR - https://www.scopus.com/pages/publications/85054665743

U2 - 10.1002/pssa.201800493

DO - 10.1002/pssa.201800493

M3 - Journal Article

SN - 1862-6300

VL - 216

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 1

M1 - 1800493

ER -

III–V Superlattices on InP/Si Metamorphic Buffer Layers for λ≈4.8 μm Quantum Cascade Lasers

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