Impact of random dopant fluctuation effect on surrounding gate mosfets: From atomic level simulation to circuit performance evaluation

Hao Wang; Chenyue Ma; Chenfei Zhang; Jin He; Zhiwei Liu; Xinnan Lin

doi:10.1166/jnn.2011.3985

Impact of random dopant fluctuation effect on surrounding gate mosfets: From atomic level simulation to circuit performance evaluation

Hao Wang, Chenyue Ma, Chenfei Zhang, Jin He^*, Zhiwei Liu, Xinnan Lin

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

2 Citations (Scopus)

Abstract

This paper investigates the impact of random dopant fluctuation effect on surrounding gate MOSFET, from atomic statistical simulation of device to circuit performance evaluation. The doping profile is generated by an analysis of each lattice atom and then the threshold voltage variation is obtained by device Drift-Diffusion simulation. Then the circuit performance evaluation is performed by feeding the result into a surrounding-gate MOSFET model. It is shown that a significant fluctuation in threshold voltage is due to the decreasing volume. The circuit simulation results also reveal that a surrounding gate MOSFET based 6-T SRAM presents a promising resistibility to noise disturbance.

Original language	English
Pages (from-to)	10429-10432
Number of pages	4
Journal	Journal of Nanoscience and Nanotechnology
Volume	11
Issue number	12
DOIs	https://doi.org/10.1166/jnn.2011.3985
Publication status	Published - 2011
Externally published	Yes

Keywords

Atomic
Dopant fluctuation
Surrounding gate MOSFET

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10.1166/jnn.2011.3985

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title = "Impact of random dopant fluctuation effect on surrounding gate mosfets: From atomic level simulation to circuit performance evaluation",

abstract = "This paper investigates the impact of random dopant fluctuation effect on surrounding gate MOSFET, from atomic statistical simulation of device to circuit performance evaluation. The doping profile is generated by an analysis of each lattice atom and then the threshold voltage variation is obtained by device Drift-Diffusion simulation. Then the circuit performance evaluation is performed by feeding the result into a surrounding-gate MOSFET model. It is shown that a significant fluctuation in threshold voltage is due to the decreasing volume. The circuit simulation results also reveal that a surrounding gate MOSFET based 6-T SRAM presents a promising resistibility to noise disturbance.",

keywords = "Atomic, Dopant fluctuation, Surrounding gate MOSFET",

author = "Hao Wang and Chenyue Ma and Chenfei Zhang and Jin He and Zhiwei Liu and Xinnan Lin",

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TY - JOUR

T1 - Impact of random dopant fluctuation effect on surrounding gate mosfets

T2 - From atomic level simulation to circuit performance evaluation

AU - Wang, Hao

AU - Ma, Chenyue

AU - Zhang, Chenfei

AU - He, Jin

AU - Liu, Zhiwei

AU - Lin, Xinnan

PY - 2011

Y1 - 2011

N2 - This paper investigates the impact of random dopant fluctuation effect on surrounding gate MOSFET, from atomic statistical simulation of device to circuit performance evaluation. The doping profile is generated by an analysis of each lattice atom and then the threshold voltage variation is obtained by device Drift-Diffusion simulation. Then the circuit performance evaluation is performed by feeding the result into a surrounding-gate MOSFET model. It is shown that a significant fluctuation in threshold voltage is due to the decreasing volume. The circuit simulation results also reveal that a surrounding gate MOSFET based 6-T SRAM presents a promising resistibility to noise disturbance.

AB - This paper investigates the impact of random dopant fluctuation effect on surrounding gate MOSFET, from atomic statistical simulation of device to circuit performance evaluation. The doping profile is generated by an analysis of each lattice atom and then the threshold voltage variation is obtained by device Drift-Diffusion simulation. Then the circuit performance evaluation is performed by feeding the result into a surrounding-gate MOSFET model. It is shown that a significant fluctuation in threshold voltage is due to the decreasing volume. The circuit simulation results also reveal that a surrounding gate MOSFET based 6-T SRAM presents a promising resistibility to noise disturbance.

KW - Atomic

KW - Dopant fluctuation

KW - Surrounding gate MOSFET

UR - https://www.scopus.com/pages/publications/84863142666

U2 - 10.1166/jnn.2011.3985

DO - 10.1166/jnn.2011.3985

M3 - Journal Article

AN - SCOPUS:84863142666

SN - 1533-4880

VL - 11

SP - 10429

EP - 10432

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 12

ER -

Impact of random dopant fluctuation effect on surrounding gate mosfets: From atomic level simulation to circuit performance evaluation

Abstract

Keywords

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