Improved blocking capability of N-ion-implanted β-Ga2O3 U-shaped trench gate MOSFET by annealing in oxygen

Qi Liu; Jingbo Zhou; Xuanze Zhou; Man Hoi Wong; Huidong Yao; Jinyang Liu; Xiaodong Zhang; Guangwei Xu; Shibing Long

doi:10.35848/1882-0786/adcafe

Improved blocking capability of N-ion-implanted β-Ga₂O₃ U-shaped trench gate MOSFET by annealing in oxygen

Qi Liu, Jingbo Zhou, Xuanze Zhou^*, Man Hoi Wong, Huidong Yao, Jinyang Liu, Xiaodong Zhang^*, Guangwei Xu^*, Shibing Long

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Journal Article › peer-review

3 Citations (Scopus)

Abstract

To improve the blocking capability of U-shaped trench gate MOSFETs (UMOSFETs) based on nitrogen-implanted current blocking layer (CBL), the post-implantation annealing atmosphere is optimized. Compared to the UMOSFET annealed in nitrogen, the oxygen-annealed device shows an improved breakdown voltage, increasing from 830 V to 1330 V, while maintaining similar specific on-resistance. By analyzing the leakage mechanisms of CBLs, the lower leakage current in the oxygen-annealed device is attributed to the reduced concentration of certain deep donors and the change in trap energy level involved in the Poole-Frenkel (PF) emission. This work validates oxygen annealing as an effective approach to optimizing nitrogen-implanted β-Ga₂O₃ power MOSFETs.

Original language	English
Article number	041003
Journal	Applied Physics Express
Volume	18
Issue number	4
DOIs	https://doi.org/10.35848/1882-0786/adcafe
Publication status	Published - 1 Apr 2025

Bibliographical note

Publisher Copyright:
© 2025 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd.

Keywords

GaO
enhancement mode
ion implantation
vertical MOSFET

Access to Document

10.35848/1882-0786/adcafe

Cite this

@article{28977ca18de54ff49b171ff9a0c98dba,

title = "Improved blocking capability of N-ion-implanted β-Ga2O3 U-shaped trench gate MOSFET by annealing in oxygen",

abstract = "To improve the blocking capability of U-shaped trench gate MOSFETs (UMOSFETs) based on nitrogen-implanted current blocking layer (CBL), the post-implantation annealing atmosphere is optimized. Compared to the UMOSFET annealed in nitrogen, the oxygen-annealed device shows an improved breakdown voltage, increasing from 830 V to 1330 V, while maintaining similar specific on-resistance. By analyzing the leakage mechanisms of CBLs, the lower leakage current in the oxygen-annealed device is attributed to the reduced concentration of certain deep donors and the change in trap energy level involved in the Poole-Frenkel (PF) emission. This work validates oxygen annealing as an effective approach to optimizing nitrogen-implanted β-Ga2O3 power MOSFETs.",

keywords = "GaO, enhancement mode, ion implantation, vertical MOSFET",

author = "Qi Liu and Jingbo Zhou and Xuanze Zhou and Wong, \{Man Hoi\} and Huidong Yao and Jinyang Liu and Xiaodong Zhang and Guangwei Xu and Shibing Long",

note = "Publisher Copyright: {\textcopyright} 2025 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd.",

year = "2025",

month = apr,

day = "1",

doi = "10.35848/1882-0786/adcafe",

language = "English",

volume = "18",

journal = "Applied Physics Express",

issn = "1882-0778",

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TY - JOUR

T1 - Improved blocking capability of N-ion-implanted β-Ga2O3 U-shaped trench gate MOSFET by annealing in oxygen

AU - Liu, Qi

AU - Zhou, Jingbo

AU - Zhou, Xuanze

AU - Wong, Man Hoi

AU - Yao, Huidong

AU - Liu, Jinyang

AU - Zhang, Xiaodong

AU - Xu, Guangwei

AU - Long, Shibing

PY - 2025/4/1

Y1 - 2025/4/1

N2 - To improve the blocking capability of U-shaped trench gate MOSFETs (UMOSFETs) based on nitrogen-implanted current blocking layer (CBL), the post-implantation annealing atmosphere is optimized. Compared to the UMOSFET annealed in nitrogen, the oxygen-annealed device shows an improved breakdown voltage, increasing from 830 V to 1330 V, while maintaining similar specific on-resistance. By analyzing the leakage mechanisms of CBLs, the lower leakage current in the oxygen-annealed device is attributed to the reduced concentration of certain deep donors and the change in trap energy level involved in the Poole-Frenkel (PF) emission. This work validates oxygen annealing as an effective approach to optimizing nitrogen-implanted β-Ga2O3 power MOSFETs.

AB - To improve the blocking capability of U-shaped trench gate MOSFETs (UMOSFETs) based on nitrogen-implanted current blocking layer (CBL), the post-implantation annealing atmosphere is optimized. Compared to the UMOSFET annealed in nitrogen, the oxygen-annealed device shows an improved breakdown voltage, increasing from 830 V to 1330 V, while maintaining similar specific on-resistance. By analyzing the leakage mechanisms of CBLs, the lower leakage current in the oxygen-annealed device is attributed to the reduced concentration of certain deep donors and the change in trap energy level involved in the Poole-Frenkel (PF) emission. This work validates oxygen annealing as an effective approach to optimizing nitrogen-implanted β-Ga2O3 power MOSFETs.

KW - GaO

KW - enhancement mode

KW - ion implantation

KW - vertical MOSFET

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:001474955500001

UR - https://openalex.org/W4409305139

UR - https://www.scopus.com/pages/publications/105003625347

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DO - 10.35848/1882-0786/adcafe

M3 - Journal Article

SN - 1882-0778

VL - 18

JO - Applied Physics Express

JF - Applied Physics Express

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M1 - 041003

ER -