TY - GEN
T1 - Improved electrical characteristics of zinc oxide thin-film with fluorine passivation
AU - Ye, Zhi
AU - Wong, Man
PY - 2012
Y1 - 2012
N2 - Thin-film transistors fabricated on fluorinated zinc oxide have been found to exhibit improved electrical characteristics. The dependence of the extent of the improvement on the amount of fluorine is investigated. At a fluorine concentration of ∼1020/cm3, transistors with a relatively high field-effect mobility of ∼71cm2/Vs, a relatively low pseudo sub-threshold slope of 0.18V/decade and improved reliability have been realized. The enhancement is attributed to the passivation of carrier traps by fluorine. Fluorine concentration in excess of ∼1020/cm 3 is found to degrade transistor performance.
AB - Thin-film transistors fabricated on fluorinated zinc oxide have been found to exhibit improved electrical characteristics. The dependence of the extent of the improvement on the amount of fluorine is investigated. At a fluorine concentration of ∼1020/cm3, transistors with a relatively high field-effect mobility of ∼71cm2/Vs, a relatively low pseudo sub-threshold slope of 0.18V/decade and improved reliability have been realized. The enhancement is attributed to the passivation of carrier traps by fluorine. Fluorine concentration in excess of ∼1020/cm 3 is found to degrade transistor performance.
UR - https://openalex.org/W2050095108
UR - https://www.scopus.com/pages/publications/84874882763
U2 - 10.1109/ICSICT.2012.6467576
DO - 10.1109/ICSICT.2012.6467576
M3 - Conference Paper published in a book
SN - 9781467324724
T3 - ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
BT - ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
T2 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012
Y2 - 29 October 2012 through 1 November 2012
ER -