Improved processing technology for GaN-capped deeply-recessed GaN HEMTs without surface passivation

L. Shen; L. McCarthy; T. Palacios; M. H. Wong; C. Poblenz; A. Corrion; S. Keller; S. P. DenBaars; J. S. Speck; U. K. Mishra

Improved processing technology for GaN-capped deeply-recessed GaN HEMTs without surface passivation

L. Shen^*, L. McCarthy, T. Palacios, M. H. Wong, C. Poblenz, A. Corrion, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra

^*Corresponding author for this work

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

Original language	English
Title of host publication	64th DRC 2006 - Device Research Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	101-102
Number of pages	2
ISBN (Electronic)	0780397495, 9780780397491
Publication status	Published - 2006
Externally published	Yes
Event	64th Device Research Conference, DRC 2006 - Parker, United States Duration: 26 Jun 2006 → 28 Jun 2006

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Conference

Conference	64th Device Research Conference, DRC 2006
Country/Territory	United States
City	Parker
Period	26/06/06 → 28/06/06

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https://hdl.handle.net/1783.1/121118

Cite this

Shen, L., McCarthy, L., Palacios, T., Wong, M. H., Poblenz, C., Corrion, A., Keller, S., DenBaars, S. P., Speck, J. S., & Mishra, U. K. (2006). Improved processing technology for GaN-capped deeply-recessed GaN HEMTs without surface passivation. In 64th DRC 2006 - Device Research Conference (pp. 101-102). (Device Research Conference - Conference Digest, DRC). Institute of Electrical and Electronics Engineers Inc.. https://hdl.handle.net/1783.1/121118

@inproceedings{a6fadf1703684c99952bbb1754954945,

title = "Improved processing technology for GaN-capped deeply-recessed GaN HEMTs without surface passivation",

author = "L. Shen and L. McCarthy and T. Palacios and Wong, \{M. H.\} and C. Poblenz and A. Corrion and S. Keller and DenBaars, \{S. P.\} and Speck, \{J. S.\} and Mishra, \{U. K.\}",

year = "2006",

language = "English",

series = "Device Research Conference - Conference Digest, DRC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "101--102",

booktitle = "64th DRC 2006 - Device Research Conference",

note = "64th Device Research Conference, DRC 2006 ; Conference date: 26-06-2006 Through 28-06-2006",

}

Shen, L, McCarthy, L, Palacios, T, Wong, MH, Poblenz, C, Corrion, A, Keller, S, DenBaars, SP, Speck, JS & Mishra, UK 2006, Improved processing technology for GaN-capped deeply-recessed GaN HEMTs without surface passivation. in 64th DRC 2006 - Device Research Conference. Device Research Conference - Conference Digest, DRC, Institute of Electrical and Electronics Engineers Inc., pp. 101-102, 64th Device Research Conference, DRC 2006, Parker, United States, 26/06/06. <https://hdl.handle.net/1783.1/121118>

Improved processing technology for GaN-capped deeply-recessed GaN HEMTs without surface passivation. / Shen, L.; McCarthy, L.; Palacios, T. et al.
64th DRC 2006 - Device Research Conference. Institute of Electrical and Electronics Engineers Inc., 2006. p. 101-102 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Improved processing technology for GaN-capped deeply-recessed GaN HEMTs without surface passivation

AU - Shen, L.

AU - McCarthy, L.

AU - Palacios, T.

AU - Wong, M. H.

AU - Poblenz, C.

AU - Corrion, A.

AU - Keller, S.

AU - DenBaars, S. P.

AU - Speck, J. S.

AU - Mishra, U. K.

PY - 2006

Y1 - 2006

UR - https://www.scopus.com/pages/publications/85205738988

M3 - Conference Paper published in a book

AN - SCOPUS:85205738988

T3 - Device Research Conference - Conference Digest, DRC

SP - 101

EP - 102

BT - 64th DRC 2006 - Device Research Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 64th Device Research Conference, DRC 2006

Y2 - 26 June 2006 through 28 June 2006

ER -

Improved processing technology for GaN-capped deeply-recessed GaN HEMTs without surface passivation

Publication series

Conference

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