Improved source resistance in InP-based enhancement-modeHEMTs for high speed digital applications

K. J. Chen; K. Maezawa; K. Arai; M. Yamamoto; T. Enoki

doi:10.1049/el:19950603

Improved source resistance in InP-based enhancement-modeHEMTs for high speed digital applications

K. J. Chen, K. Maezawa, K. Arai, M. Yamamoto, T. Enoki

Research output: Contribution to journal › Journal Article › peer-review

12 Citations (Scopus)

Abstract

A new approach to reducing the source resistance in InP-based InAlAs/InGaAs enhancement-mode HEMTs is developed using Pt-based buried-gate technology. Source resistance as small as 0.2Ωmm is obtained, which results in an excellent transconductance of 1170 mS/mm for a 0.5μm long gate enhancement-mode HEMT.

Original language	English
Pages (from-to)	925-927
Number of pages	3
Journal	Electronics Letters
Volume	31
Issue number	11
DOIs	https://doi.org/10.1049/el:19950603
Publication status	Published - 25 May 1995
Externally published	Yes

Keywords

High electron mobility transistors
Indium phosphide

Access to Document

10.1049/el:19950603

Cite this

@article{5ec7cdc557fa4e2f81831c01e66679bc,

title = "Improved source resistance in InP-based enhancement-modeHEMTs for high speed digital applications",

abstract = "A new approach to reducing the source resistance in InP-based InAlAs/InGaAs enhancement-mode HEMTs is developed using Pt-based buried-gate technology. Source resistance as small as 0.2Ωmm is obtained, which results in an excellent transconductance of 1170 mS/mm for a 0.5μm long gate enhancement-mode HEMT.",

keywords = "High electron mobility transistors, Indium phosphide",

author = "Chen, \{K. J.\} and K. Maezawa and K. Arai and M. Yamamoto and T. Enoki",

year = "1995",

month = may,

day = "25",

doi = "10.1049/el:19950603",

language = "English",

volume = "31",

pages = "925--927",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

number = "11",

}

TY - JOUR

T1 - Improved source resistance in InP-based enhancement-modeHEMTs for high speed digital applications

AU - Chen, K. J.

AU - Maezawa, K.

AU - Arai, K.

AU - Yamamoto, M.

AU - Enoki, T.

PY - 1995/5/25

Y1 - 1995/5/25

N2 - A new approach to reducing the source resistance in InP-based InAlAs/InGaAs enhancement-mode HEMTs is developed using Pt-based buried-gate technology. Source resistance as small as 0.2Ωmm is obtained, which results in an excellent transconductance of 1170 mS/mm for a 0.5μm long gate enhancement-mode HEMT.

AB - A new approach to reducing the source resistance in InP-based InAlAs/InGaAs enhancement-mode HEMTs is developed using Pt-based buried-gate technology. Source resistance as small as 0.2Ωmm is obtained, which results in an excellent transconductance of 1170 mS/mm for a 0.5μm long gate enhancement-mode HEMT.

KW - High electron mobility transistors

KW - Indium phosphide

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:A1995RC65600061

UR - https://openalex.org/W1985479832

UR - https://www.scopus.com/pages/publications/0029308818

U2 - 10.1049/el:19950603

DO - 10.1049/el:19950603

M3 - Journal Article

SN - 0013-5194

VL - 31

SP - 925

EP - 927

JO - Electronics Letters

JF - Electronics Letters

IS - 11

ER -

Improved source resistance in InP-based enhancement-modeHEMTs for high speed digital applications

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this