Improved surface morphology and mobility of AlGaN/GaN HEMT grown on silicon substrate

Xueliang Zhu; Jun Ma; Tongde Huang; Ming Li; Ka Ming Wong; Kei May Lau

doi:10.1002/pssc.201100447

Improved surface morphology and mobility of AlGaN/GaN HEMT grown on silicon substrate

Xueliang Zhu
, Jun Ma
, Tongde Huang
, Ming Li
, Ka Ming Wong
, Kei May Lau^*

^*Corresponding author for this work

Division of Emerging Interdisciplinary Areas

Research output: Contribution to journal › Journal Article › peer-review

5 Citations (Scopus)

Abstract

High mobility AlGaN/GaN HEMT was grown on silicon substrates by MOCVD. Smooth and crack-free wafers were obtained by implementation of an AlN/AlGaN super-lattice interlayer. We also found that the carrier gases have a great influence on the surface morphology of the AlGaN barrier. With a proper ratio of carrier gases, the AlGaN surface is significantly improved. With other optimized growth conditions, the electron mobility of HEMT can be as high as 1650 cm ²/Vs. HEMT devices are also fabricatied and the reverse biased gate leakage current was reduced to 6.5 μA/mm at V _gs = -35 V.

Original language	English
Pages (from-to)	473-475
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	9
Issue number	3-4
DOIs	https://doi.org/10.1002/pssc.201100447
Publication status	Published - Mar 2012

Keywords

GaN HEMT
MOCVD
Reverse leakage current

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10.1002/pssc.201100447

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title = "Improved surface morphology and mobility of AlGaN/GaN HEMT grown on silicon substrate",

abstract = "High mobility AlGaN/GaN HEMT was grown on silicon substrates by MOCVD. Smooth and crack-free wafers were obtained by implementation of an AlN/AlGaN super-lattice interlayer. We also found that the carrier gases have a great influence on the surface morphology of the AlGaN barrier. With a proper ratio of carrier gases, the AlGaN surface is significantly improved. With other optimized growth conditions, the electron mobility of HEMT can be as high as 1650 cm 2/Vs. HEMT devices are also fabricatied and the reverse biased gate leakage current was reduced to 6.5 μA/mm at V gs = -35 V.",

keywords = "GaN HEMT, MOCVD, Reverse leakage current",

author = "Xueliang Zhu and Jun Ma and Tongde Huang and Ming Li and Wong, \{Ka Ming\} and Lau, \{Kei May\}",

year = "2012",

month = mar,

doi = "10.1002/pssc.201100447",

language = "English",

volume = "9",

pages = "473--475",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

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publisher = "Wiley-VCH Verlag",

number = "3-4",

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TY - JOUR

T1 - Improved surface morphology and mobility of AlGaN/GaN HEMT grown on silicon substrate

AU - Zhu, Xueliang

AU - Ma, Jun

AU - Huang, Tongde

AU - Li, Ming

AU - Wong, Ka Ming

AU - Lau, Kei May

PY - 2012/3

Y1 - 2012/3

N2 - High mobility AlGaN/GaN HEMT was grown on silicon substrates by MOCVD. Smooth and crack-free wafers were obtained by implementation of an AlN/AlGaN super-lattice interlayer. We also found that the carrier gases have a great influence on the surface morphology of the AlGaN barrier. With a proper ratio of carrier gases, the AlGaN surface is significantly improved. With other optimized growth conditions, the electron mobility of HEMT can be as high as 1650 cm 2/Vs. HEMT devices are also fabricatied and the reverse biased gate leakage current was reduced to 6.5 μA/mm at V gs = -35 V.

AB - High mobility AlGaN/GaN HEMT was grown on silicon substrates by MOCVD. Smooth and crack-free wafers were obtained by implementation of an AlN/AlGaN super-lattice interlayer. We also found that the carrier gases have a great influence on the surface morphology of the AlGaN barrier. With a proper ratio of carrier gases, the AlGaN surface is significantly improved. With other optimized growth conditions, the electron mobility of HEMT can be as high as 1650 cm 2/Vs. HEMT devices are also fabricatied and the reverse biased gate leakage current was reduced to 6.5 μA/mm at V gs = -35 V.

KW - GaN HEMT

KW - MOCVD

KW - Reverse leakage current

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000306521600011

UR - https://openalex.org/W2050233385

U2 - 10.1002/pssc.201100447

DO - 10.1002/pssc.201100447

M3 - Journal Article

SN - 1862-6351

VL - 9

SP - 473

EP - 475

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 3-4

ER -

Improved surface morphology and mobility of AlGaN/GaN HEMT grown on silicon substrate

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Keywords

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