Abstract
In this paper, gate current characteristics of the single- and double-gate race-track-shaped field emitter structures are reported. The field emission characteristics of single- and double-gate structures are calculated by the finite-difference method in Non-Orthogonal Curvilinear Coordinate System and the fourth-order Runge-Kutta method. Numerical simulations show that turn-on voltage of the double-gate structure is reduced by 30% and the ratio of anode current to gate current is increased by 36 times at a gate voltage of 350 V compared to the single-gate structure.
| Original language | English |
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| Pages | 286-290 |
| Number of pages | 5 |
| Publication status | Published - 1997 |
| Externally published | Yes |
| Event | Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 - Kyongju, Korea Duration: 17 Aug 1997 → 21 Aug 1997 |
Conference
| Conference | Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 |
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| City | Kyongju, Korea |
| Period | 17/08/97 → 21/08/97 |