IN-SITU MOS GATE ENGINEERING IN A NOVEL RAPID THERMAL/PLASMA MULTIPROCESSING REACTOR.

The authors have developed a novel cold-wall single-wafer thermal/plasma multiprocessing reactor for in situ growth and deposition of dielectrics, silicon, and metals for MOS VLSI circuits. The main objective was to develop reliable processes for in situ fabrication of W-gate MOS devices, which requires the growth of gate dielectric by rapid thermal oxidation and nitridation cycles followed by a nonselective W deposition process to form the gate electrode. Various in situ MOS devices were successfully fabricated using these techniques.