InAs Quantum Dots Lasers Directly Grown on Silicon Emitting at Telecom Wavelengths

Kei May Lau

doi:10.1109/IPCon.2018.8527161

InAs Quantum Dots Lasers Directly Grown on Silicon Emitting at Telecom Wavelengths

Kei May Lau^*

^*Corresponding author for this work

Division of Emerging Interdisciplinary Areas

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

Abstract

The first 1.5 μm InP-based QD lasers directly grown on on-axis (001) Si by MOCVD, with multi-stack InAs/InAlGaAs/InP QDs on compliant III-V/Si substrates, as well as nano-ridge lasers with embedded quantum wells will be described. Growth and laser characteristics of nano-lasers, whispering-gallery-mode (WGM) micro-lasers, and Fabry Parot lasers will be discussed.

Original language	English
Title of host publication	31st Annual Conference of the IEEE Photonics Society, IPC 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538653586
DOIs	https://doi.org/10.1109/IPCon.2018.8527161
Publication status	Published - 6 Nov 2018
Event	31st Annual Conference of the IEEE Photonics Society, IPC 2018 - Reston, United States Duration: 30 Sept 2018 → 4 Oct 2018

Publication series

Name	31st Annual Conference of the IEEE Photonics Society, IPC 2018

Conference

Conference	31st Annual Conference of the IEEE Photonics Society, IPC 2018
Country/Territory	United States
City	Reston
Period	30/09/18 → 4/10/18

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

Access to Document

10.1109/IPCon.2018.8527161

Cite this

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title = "InAs Quantum Dots Lasers Directly Grown on Silicon Emitting at Telecom Wavelengths",

abstract = "The first 1.5 μm InP-based QD lasers directly grown on on-axis (001) Si by MOCVD, with multi-stack InAs/InAlGaAs/InP QDs on compliant III-V/Si substrates, as well as nano-ridge lasers with embedded quantum wells will be described. Growth and laser characteristics of nano-lasers, whispering-gallery-mode (WGM) micro-lasers, and Fabry Parot lasers will be discussed.",

author = "Lau, \{Kei May\}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 31st Annual Conference of the IEEE Photonics Society, IPC 2018 ; Conference date: 30-09-2018 Through 04-10-2018",

year = "2018",

month = nov,

day = "6",

doi = "10.1109/IPCon.2018.8527161",

language = "English",

series = "31st Annual Conference of the IEEE Photonics Society, IPC 2018",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "31st Annual Conference of the IEEE Photonics Society, IPC 2018",

}

Lau, KM 2018, InAs Quantum Dots Lasers Directly Grown on Silicon Emitting at Telecom Wavelengths. in 31st Annual Conference of the IEEE Photonics Society, IPC 2018., 8527161, 31st Annual Conference of the IEEE Photonics Society, IPC 2018, Institute of Electrical and Electronics Engineers Inc., 31st Annual Conference of the IEEE Photonics Society, IPC 2018, Reston, United States, 30/09/18. https://doi.org/10.1109/IPCon.2018.8527161

InAs Quantum Dots Lasers Directly Grown on Silicon Emitting at Telecom Wavelengths. / Lau, Kei May.
31st Annual Conference of the IEEE Photonics Society, IPC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. 8527161 (31st Annual Conference of the IEEE Photonics Society, IPC 2018).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

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AU - Lau, Kei May

PY - 2018/11/6

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N2 - The first 1.5 μm InP-based QD lasers directly grown on on-axis (001) Si by MOCVD, with multi-stack InAs/InAlGaAs/InP QDs on compliant III-V/Si substrates, as well as nano-ridge lasers with embedded quantum wells will be described. Growth and laser characteristics of nano-lasers, whispering-gallery-mode (WGM) micro-lasers, and Fabry Parot lasers will be discussed.

AB - The first 1.5 μm InP-based QD lasers directly grown on on-axis (001) Si by MOCVD, with multi-stack InAs/InAlGaAs/InP QDs on compliant III-V/Si substrates, as well as nano-ridge lasers with embedded quantum wells will be described. Growth and laser characteristics of nano-lasers, whispering-gallery-mode (WGM) micro-lasers, and Fabry Parot lasers will be discussed.

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UR - https://www.scopus.com/pages/publications/85058282130

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DO - 10.1109/IPCon.2018.8527161

M3 - Conference Paper published in a book

T3 - 31st Annual Conference of the IEEE Photonics Society, IPC 2018

BT - 31st Annual Conference of the IEEE Photonics Society, IPC 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 31st Annual Conference of the IEEE Photonics Society, IPC 2018

Y2 - 30 September 2018 through 4 October 2018

ER -

InAs Quantum Dots Lasers Directly Grown on Silicon Emitting at Telecom Wavelengths

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