Abstract
Realization of a near-eye, liquid-crystal (LC) display with resolution density > 2000 pixels per inch (PPI) is desired but places great demands on the choices of the LC and the thin-film transistor (TFT) backplane technology. Presently investigated is the requirement placed on the allowable leakage current in the off-state of a scan transistor in an active-matrix LC display. With the resolution boosted by the elimination of the storage capacitor, an even more stringent limit is placed on the leakage current. It is concluded that a backplane technology based on metal-oxide TFTs offering inherently low leakage current enables the construction of a higher-resolution display. As a demonstration, a 500 PPI display based on deformed-helix ferroelectric LC and indium-gallium-zinc oxide TFTs has been fabricated and characterized.
| Original language | English |
|---|---|
| Pages (from-to) | 1114-1117 |
| Number of pages | 4 |
| Journal | Digest of Technical Papers - SID International Symposium |
| Volume | 53 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2022 |
| Event | 59th International Symposium, Seminar and Exhibition, Display Week 2022 - San Jose, United States Duration: 8 May 2022 → 13 May 2022 |
Bibliographical note
Publisher Copyright:© 2022. John Wiley and Sons Inc. AIAA. All rights reserved.
Keywords
- Active-matrix
- Ferroelectric liquid crystal
- High resolution
- Liquid crystal display
- Metal-oxide semiconductor
- Thin-film transistor
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