Influence of barrier thickness on luminescence lifetime of the two-dimensional electron gas in InAlN/GaN heterostructures

Caifeng Zhang; Ning Tang; Lei Fu; Xuelin Yang; Fujun Xu; Weikun Ge; Bo Shen

doi:10.1016/j.spmi.2016.11.071

Influence of barrier thickness on luminescence lifetime of the two-dimensional electron gas in InAlN/GaN heterostructures

Caifeng Zhang, Ning Tang^*, Lei Fu, Xuelin Yang, Fujun Xu, Weikun Ge, Bo Shen

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

Abstract

The two-dimensional electron gas (2DEG) luminescence properties of InAlN/GaN heterostructures are explored by means of photoluminescence (PL) and time-resolved PL (TRPL) spectroscopy. It is found that the thicker the barrier, the longer the luminescence lifetime. As the barrier becomes thick, the quantum confinement of the triangular quantum well increases. It is believed the space wave function overlap between the better confined electrons and spreaded holes is fewer in thicker barrier sample, which results in a longer 2DEG PL lifetime.

Original language	English
Pages (from-to)	170-173
Number of pages	4
Journal	Superlattices and Microstructures
Volume	106
DOIs	https://doi.org/10.1016/j.spmi.2016.11.071
Publication status	Published - 1 Jun 2017
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2017 Elsevier Ltd

Keywords

2DEG luminescence lifetime
Barrier thickness
InAlN/GaN heterostructures

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10.1016/j.spmi.2016.11.071

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title = "Influence of barrier thickness on luminescence lifetime of the two-dimensional electron gas in InAlN/GaN heterostructures",

abstract = "The two-dimensional electron gas (2DEG) luminescence properties of InAlN/GaN heterostructures are explored by means of photoluminescence (PL) and time-resolved PL (TRPL) spectroscopy. It is found that the thicker the barrier, the longer the luminescence lifetime. As the barrier becomes thick, the quantum confinement of the triangular quantum well increases. It is believed the space wave function overlap between the better confined electrons and spreaded holes is fewer in thicker barrier sample, which results in a longer 2DEG PL lifetime.",

keywords = "2DEG luminescence lifetime, Barrier thickness, InAlN/GaN heterostructures",

author = "Caifeng Zhang and Ning Tang and Lei Fu and Xuelin Yang and Fujun Xu and Weikun Ge and Bo Shen",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier Ltd",

year = "2017",

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doi = "10.1016/j.spmi.2016.11.071",

language = "English",

volume = "106",

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T1 - Influence of barrier thickness on luminescence lifetime of the two-dimensional electron gas in InAlN/GaN heterostructures

AU - Zhang, Caifeng

AU - Tang, Ning

AU - Fu, Lei

AU - Yang, Xuelin

AU - Xu, Fujun

AU - Ge, Weikun

AU - Shen, Bo

PY - 2017/6/1

Y1 - 2017/6/1

N2 - The two-dimensional electron gas (2DEG) luminescence properties of InAlN/GaN heterostructures are explored by means of photoluminescence (PL) and time-resolved PL (TRPL) spectroscopy. It is found that the thicker the barrier, the longer the luminescence lifetime. As the barrier becomes thick, the quantum confinement of the triangular quantum well increases. It is believed the space wave function overlap between the better confined electrons and spreaded holes is fewer in thicker barrier sample, which results in a longer 2DEG PL lifetime.

AB - The two-dimensional electron gas (2DEG) luminescence properties of InAlN/GaN heterostructures are explored by means of photoluminescence (PL) and time-resolved PL (TRPL) spectroscopy. It is found that the thicker the barrier, the longer the luminescence lifetime. As the barrier becomes thick, the quantum confinement of the triangular quantum well increases. It is believed the space wave function overlap between the better confined electrons and spreaded holes is fewer in thicker barrier sample, which results in a longer 2DEG PL lifetime.

KW - 2DEG luminescence lifetime

KW - Barrier thickness

KW - InAlN/GaN heterostructures

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000401211800018

UR - https://www.scopus.com/pages/publications/85016931146

U2 - 10.1016/j.spmi.2016.11.071

DO - 10.1016/j.spmi.2016.11.071

M3 - Journal Article

AN - SCOPUS:85016931146

SN - 0749-6036

VL - 106

SP - 170

EP - 173

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

ER -

Influence of barrier thickness on luminescence lifetime of the two-dimensional electron gas in InAlN/GaN heterostructures

Abstract

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Keywords

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