Influence of intrinsic or extrinsic doping on lattice locations of carbon in semi-insulating GaN

Yue Xu; Xuelin Yang; Peng Zhang; Xingzhong Cao; Yao Chen; Shiping Guo; Shan Wu; Jie Zhang; Yuxia Feng; Fujun Xu; Xinqiang Wang; Weikun Ge; Bo Shen

doi:10.7567/1882-0786/ab1c19

Influence of intrinsic or extrinsic doping on lattice locations of carbon in semi-insulating GaN

Yue Xu, Xuelin Yang, Peng Zhang, Xingzhong Cao, Yao Chen, Shiping Guo, Shan Wu, Jie Zhang, Yuxia Feng, Fujun Xu, Xinqiang Wang, Weikun Ge, Bo Shen

Research output: Contribution to journal › Journal Article › peer-review

10 Citations (Scopus)

Abstract

We demonstrate that different doping approaches can significantly influence the lattice locations of carbon (C) in GaN grown by MOCVD. For intrinsically doped GaN with TMGa as the C source, an annealing induced switching process of C atoms from Ga sites to N sites is observed, revealing the existence of substitutional C atoms on both Ga and N sites. While for extrinsically doped GaN with propane as the C precursor, C atoms incorporate almost on N sites. From the viewpoint of growth dynamics, we propose a mechanism for C incorporation into different lattice locations.

Original language	English
Article number	061002
Journal	Applied Physics Express
Volume	12
Issue number	6
DOIs	https://doi.org/10.7567/1882-0786/ab1c19
Publication status	Published - 1 Jun 2019
Externally published	Yes

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© 2019 The Japan Society of Applied Physics.

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title = "Influence of intrinsic or extrinsic doping on lattice locations of carbon in semi-insulating GaN",

abstract = "We demonstrate that different doping approaches can significantly influence the lattice locations of carbon (C) in GaN grown by MOCVD. For intrinsically doped GaN with TMGa as the C source, an annealing induced switching process of C atoms from Ga sites to N sites is observed, revealing the existence of substitutional C atoms on both Ga and N sites. While for extrinsically doped GaN with propane as the C precursor, C atoms incorporate almost on N sites. From the viewpoint of growth dynamics, we propose a mechanism for C incorporation into different lattice locations.",

author = "Yue Xu and Xuelin Yang and Peng Zhang and Xingzhong Cao and Yao Chen and Shiping Guo and Shan Wu and Jie Zhang and Yuxia Feng and Fujun Xu and Xinqiang Wang and Weikun Ge and Bo Shen",

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TY - JOUR

T1 - Influence of intrinsic or extrinsic doping on lattice locations of carbon in semi-insulating GaN

AU - Xu, Yue

AU - Yang, Xuelin

AU - Zhang, Peng

AU - Cao, Xingzhong

AU - Chen, Yao

AU - Guo, Shiping

AU - Wu, Shan

AU - Zhang, Jie

AU - Feng, Yuxia

AU - Xu, Fujun

AU - Wang, Xinqiang

AU - Ge, Weikun

AU - Shen, Bo

PY - 2019/6/1

Y1 - 2019/6/1

N2 - We demonstrate that different doping approaches can significantly influence the lattice locations of carbon (C) in GaN grown by MOCVD. For intrinsically doped GaN with TMGa as the C source, an annealing induced switching process of C atoms from Ga sites to N sites is observed, revealing the existence of substitutional C atoms on both Ga and N sites. While for extrinsically doped GaN with propane as the C precursor, C atoms incorporate almost on N sites. From the viewpoint of growth dynamics, we propose a mechanism for C incorporation into different lattice locations.

AB - We demonstrate that different doping approaches can significantly influence the lattice locations of carbon (C) in GaN grown by MOCVD. For intrinsically doped GaN with TMGa as the C source, an annealing induced switching process of C atoms from Ga sites to N sites is observed, revealing the existence of substitutional C atoms on both Ga and N sites. While for extrinsically doped GaN with propane as the C precursor, C atoms incorporate almost on N sites. From the viewpoint of growth dynamics, we propose a mechanism for C incorporation into different lattice locations.

UR - http://www.scopus.com/inward/record.url?scp=85069537830&partnerID=8YFLogxK

U2 - 10.7567/1882-0786/ab1c19

DO - 10.7567/1882-0786/ab1c19

M3 - Journal Article

AN - SCOPUS:85069537830

SN - 1882-0778

VL - 12

JO - Applied Physics Express

JF - Applied Physics Express

IS - 6

M1 - 061002

ER -

Influence of intrinsic or extrinsic doping on lattice locations of carbon in semi-insulating GaN

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