Influence of the thickness and doping of the emission layer on the performance of organic light-emitting diodes with PiN structure

Jingsong Huang; Jan Blochwitz-Nimoth; Martin Pfeiffer; Karl Leo

doi:10.1063/1.1533838

Influence of the thickness and doping of the emission layer on the performance of organic light-emitting diodes with PiN structure

Jingsong Huang, Jan Blochwitz-Nimoth, Martin Pfeiffer, Karl Leo^*

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

48 Citations (Scopus)

Abstract

The influence of the thickness and doping of the emission layer on the performance of organic light emitting diodes (OLED) with a p-doped hole-transport layer (HTL) and an n-doped electron transport layer (ETL) was studied. The structure was known as the PiN structure. The molecular structures of the emitter dopants and the layer sequence of the PiN devices were shown.

Original language	English
Pages (from-to)	838-844
Number of pages	7
Journal	Journal of Applied Physics
Volume	93
Issue number	2
DOIs	https://doi.org/10.1063/1.1533838
Publication status	Published - 15 Jan 2003
Externally published	Yes

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10.1063/1.1533838

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title = "Influence of the thickness and doping of the emission layer on the performance of organic light-emitting diodes with PiN structure",

abstract = "The influence of the thickness and doping of the emission layer on the performance of organic light emitting diodes (OLED) with a p-doped hole-transport layer (HTL) and an n-doped electron transport layer (ETL) was studied. The structure was known as the PiN structure. The molecular structures of the emitter dopants and the layer sequence of the PiN devices were shown.",

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AU - Huang, Jingsong

AU - Blochwitz-Nimoth, Jan

AU - Pfeiffer, Martin

AU - Leo, Karl

PY - 2003/1/15

Y1 - 2003/1/15

N2 - The influence of the thickness and doping of the emission layer on the performance of organic light emitting diodes (OLED) with a p-doped hole-transport layer (HTL) and an n-doped electron transport layer (ETL) was studied. The structure was known as the PiN structure. The molecular structures of the emitter dopants and the layer sequence of the PiN devices were shown.

AB - The influence of the thickness and doping of the emission layer on the performance of organic light emitting diodes (OLED) with a p-doped hole-transport layer (HTL) and an n-doped electron transport layer (ETL) was studied. The structure was known as the PiN structure. The molecular structures of the emitter dopants and the layer sequence of the PiN devices were shown.

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000180134200004

UR - https://www.scopus.com/pages/publications/0037439289

U2 - 10.1063/1.1533838

DO - 10.1063/1.1533838

M3 - Journal Article

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VL - 93

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EP - 844

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

ER -

Influence of the thickness and doping of the emission layer on the performance of organic light-emitting diodes with PiN structure

Abstract

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