Intensity-dependent photoluminescence spectra of semiconductor-doped glasses

J. P. Zheng*, L. Shi, F. S. Choa, P. L. Liu, H. S. Kwok

*Corresponding author for this work

Research output: Contribution to journalJournal Articlepeer-review

49 Citations (Scopus)

Abstract

The photoluminescence spectra of CdSx Se1-x doped glasses were found to be strongly dependent on the pumping laser intensity. Two spectral features corresponding to two different recombination mechanisms were identified. The dynamic behavior can be explained by the competition between tunneling-mediated recombination of deeply trapped charges and direct recombination of excitons, free and shallowly trapped carriers, and nonradiative recombination. Large (>30 nm) blue shifts of both peaks were also observed as a function of the laser intensity.

Original languageEnglish
Pages (from-to)643-645
Number of pages3
JournalApplied Physics Letters
Volume53
Issue number8
DOIs
Publication statusPublished - 1988
Externally publishedYes

Fingerprint

Dive into the research topics of 'Intensity-dependent photoluminescence spectra of semiconductor-doped glasses'. Together they form a unique fingerprint.

Cite this