Interface effect in Nb-Bi2Te3 hybrid structure

Hong Chao Liu; Hong Tao He; Bai Kui Li; Shi Guang Liu; Qing Lin He; Gan Wang; Iam Keong Sou; Jiannong Wang

doi:10.1063/1.4824651

Interface effect in Nb-Bi₂Te₃ hybrid structure

Hong Chao Liu, Hong Tao He, Bai Kui Li, Shi Guang Liu, Qing Lin He, Gan Wang, Iam Keong Sou, Jiannong Wang^*

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Journal Article › peer-review

8 Citations (Scopus)

Abstract

An array of Nb strips was fabricated on a Bi₂Te₃ thin film. Transport measurements show that an upturn of the resistance occurs below the Nb superconducting transition temperature. Corresponding to this resistance upturn, a differential resistance peak around zero bias and a prominent negative magnetoresistance at low magnetic fields are observed. The resistance upturn, differential resistance peak, and negative magnetoresistance can be suppressed by increasing measurement current, temperature, and applied magnetic field. We explain these phenomena in terms of an energy barrier effect induced by the Nb superconducting gap and the suppression of Andreev reflection due to the low transparency at the Nb-Bi₂Te₃ interface.

Original language	English
Article number	152601
Journal	Applied Physics Letters
Volume	103
Issue number	15
DOIs	https://doi.org/10.1063/1.4824651
Publication status	Published - 7 Oct 2013

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title = "Interface effect in Nb-Bi2Te3 hybrid structure",

abstract = "An array of Nb strips was fabricated on a Bi2Te3 thin film. Transport measurements show that an upturn of the resistance occurs below the Nb superconducting transition temperature. Corresponding to this resistance upturn, a differential resistance peak around zero bias and a prominent negative magnetoresistance at low magnetic fields are observed. The resistance upturn, differential resistance peak, and negative magnetoresistance can be suppressed by increasing measurement current, temperature, and applied magnetic field. We explain these phenomena in terms of an energy barrier effect induced by the Nb superconducting gap and the suppression of Andreev reflection due to the low transparency at the Nb-Bi2Te3 interface.",

author = "Liu, \{Hong Chao\} and He, \{Hong Tao\} and Li, \{Bai Kui\} and Liu, \{Shi Guang\} and \{Lin He\}, Qing and Gan Wang and Sou, \{Iam Keong\} and Jiannong Wang",

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T1 - Interface effect in Nb-Bi2Te3 hybrid structure

AU - Liu, Hong Chao

AU - He, Hong Tao

AU - Li, Bai Kui

AU - Liu, Shi Guang

AU - Lin He, Qing

AU - Wang, Gan

AU - Sou, Iam Keong

AU - Wang, Jiannong

PY - 2013/10/7

Y1 - 2013/10/7

N2 - An array of Nb strips was fabricated on a Bi2Te3 thin film. Transport measurements show that an upturn of the resistance occurs below the Nb superconducting transition temperature. Corresponding to this resistance upturn, a differential resistance peak around zero bias and a prominent negative magnetoresistance at low magnetic fields are observed. The resistance upturn, differential resistance peak, and negative magnetoresistance can be suppressed by increasing measurement current, temperature, and applied magnetic field. We explain these phenomena in terms of an energy barrier effect induced by the Nb superconducting gap and the suppression of Andreev reflection due to the low transparency at the Nb-Bi2Te3 interface.

AB - An array of Nb strips was fabricated on a Bi2Te3 thin film. Transport measurements show that an upturn of the resistance occurs below the Nb superconducting transition temperature. Corresponding to this resistance upturn, a differential resistance peak around zero bias and a prominent negative magnetoresistance at low magnetic fields are observed. The resistance upturn, differential resistance peak, and negative magnetoresistance can be suppressed by increasing measurement current, temperature, and applied magnetic field. We explain these phenomena in terms of an energy barrier effect induced by the Nb superconducting gap and the suppression of Andreev reflection due to the low transparency at the Nb-Bi2Te3 interface.

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000325779700052

UR - https://openalex.org/W2055397037

U2 - 10.1063/1.4824651

DO - 10.1063/1.4824651

M3 - Journal Article

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 152601

ER -

Interface effect in Nb-Bi₂Te₃ hybrid structure

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