Interface engineering to enhance phase change memory programmability

Yihan Chen; Mansun Chan; Xinnan Lin; Zhitong Song

doi:10.1109/EDSSC.2015.7285091

Interface engineering to enhance phase change memory programmability

Yihan Chen, Mansun Chan, Xinnan Lin, Zhitong Song

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

1 Citation (Scopus)

Abstract

Despite the promise for resistive phase-change memory to be used in the BEOL memory integration, achieving low current programming and rapid thermal cycle management are still the main barriers in term of operation. In this work, different methods to reduce the programming current are examined with respect to their effects on thermal cycling during SET and RESET. In particular, the discussion will focus on the engineering of the electrode to phase-change material interface to achieve low programming current. Experimental demonstration and thermal simulation data are used to illustrate the concept and explain the device behaviors.

Original language	English
Title of host publication	Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	225-228
Number of pages	4
ISBN (Electronic)	9781479983636
DOIs	https://doi.org/10.1109/EDSSC.2015.7285091
Publication status	Published - 30 Sept 2015
Event	11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015 - Singapore, Singapore Duration: 1 Jun 2015 → 4 Jun 2015

Publication series

Name	Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015

Conference

Conference	11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015
Country/Territory	Singapore
City	Singapore
Period	1/06/15 → 4/06/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

Keywords

Phase-change memory
non-volatile memory
resistive memory

Access to Document

10.1109/EDSSC.2015.7285091

Cite this

Chen, Y., Chan, M., Lin, X., & Song, Z. (2015). Interface engineering to enhance phase change memory programmability. In Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015 (pp. 225-228). Article 7285091 (Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2015.7285091

Chen, Yihan ; Chan, Mansun ; Lin, Xinnan et al. / Interface engineering to enhance phase change memory programmability. Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 225-228 (Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015).

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title = "Interface engineering to enhance phase change memory programmability",

abstract = "Despite the promise for resistive phase-change memory to be used in the BEOL memory integration, achieving low current programming and rapid thermal cycle management are still the main barriers in term of operation. In this work, different methods to reduce the programming current are examined with respect to their effects on thermal cycling during SET and RESET. In particular, the discussion will focus on the engineering of the electrode to phase-change material interface to achieve low programming current. Experimental demonstration and thermal simulation data are used to illustrate the concept and explain the device behaviors.",

keywords = "Phase-change memory, non-volatile memory, resistive memory",

author = "Yihan Chen and Mansun Chan and Xinnan Lin and Zhitong Song",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015 ; Conference date: 01-06-2015 Through 04-06-2015",

year = "2015",

month = sep,

day = "30",

doi = "10.1109/EDSSC.2015.7285091",

language = "English",

series = "Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015",

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booktitle = "Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015",

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Chen, Y, Chan, M, Lin, X & Song, Z 2015, Interface engineering to enhance phase change memory programmability. in Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015., 7285091, Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015, Institute of Electrical and Electronics Engineers Inc., pp. 225-228, 11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015, Singapore, Singapore, 1/06/15. https://doi.org/10.1109/EDSSC.2015.7285091

Interface engineering to enhance phase change memory programmability. / Chen, Yihan; Chan, Mansun; Lin, Xinnan et al.
Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 225-228 7285091 (Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Interface engineering to enhance phase change memory programmability

AU - Chen, Yihan

AU - Chan, Mansun

AU - Lin, Xinnan

AU - Song, Zhitong

PY - 2015/9/30

Y1 - 2015/9/30

N2 - Despite the promise for resistive phase-change memory to be used in the BEOL memory integration, achieving low current programming and rapid thermal cycle management are still the main barriers in term of operation. In this work, different methods to reduce the programming current are examined with respect to their effects on thermal cycling during SET and RESET. In particular, the discussion will focus on the engineering of the electrode to phase-change material interface to achieve low programming current. Experimental demonstration and thermal simulation data are used to illustrate the concept and explain the device behaviors.

AB - Despite the promise for resistive phase-change memory to be used in the BEOL memory integration, achieving low current programming and rapid thermal cycle management are still the main barriers in term of operation. In this work, different methods to reduce the programming current are examined with respect to their effects on thermal cycling during SET and RESET. In particular, the discussion will focus on the engineering of the electrode to phase-change material interface to achieve low programming current. Experimental demonstration and thermal simulation data are used to illustrate the concept and explain the device behaviors.

KW - Phase-change memory

KW - non-volatile memory

KW - resistive memory

UR - https://openalex.org/W1627734572

UR - https://www.scopus.com/pages/publications/84962159572

U2 - 10.1109/EDSSC.2015.7285091

DO - 10.1109/EDSSC.2015.7285091

M3 - Conference Paper published in a book

T3 - Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015

SP - 225

EP - 228

BT - Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015

Y2 - 1 June 2015 through 4 June 2015

ER -

Chen Y, Chan M, Lin X, Song Z. Interface engineering to enhance phase change memory programmability. In Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 225-228. 7285091. (Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015). doi: 10.1109/EDSSC.2015.7285091

Interface engineering to enhance phase change memory programmability

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Keywords

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