Inverted-type InGaAs metal-oxide-semiconductor high-electron-mobility transistor on Si substrate with maximum drain current exceeding 2A/mm

Inverted-type In _0.51Al _0.49As/In _0.53Ga _0.47As metal-oxide-semiconductor high-electron-mobility transistor grown by metal organic chemical vapor deposition on a Si substrate was demonstrated. 8 nm atomic-layer-deposited Al ₂O ₃ was used as gate dielectric. N ⁺⁺ InGaAs with an electron density of 4.5 × 10 ¹⁹ cm ^-3 was selectively regrown in the source/drain regions to reduce parasitic resistance while eliminating the conventional gate recess etching. 130-nm channel-length devices have exhibited a drain current up to 2.03A/mm at V _ds = 0.6 V and an ultralow on-resistance of 163ω μm. An effective mobility of 2975 cm ² V ^-1 s ^-1 was also extracted, indicating the high-quality epitaxial growth by metal organic chemical vapor deposition.