Investigation of Enhanced Robustness Against Floating-Substrate-Induced Dynamic RON Degradation in 900-V p-GaN Gate HEMT Using Virtual-Body Technology

Hao Chang; Junjie Yang; Jingjing Yu; Jiawei Cui; Youyi Yin; Han Yang; Xuelin Yang; Jinyan Wang; Maojun Wang; Bo Shen; Jin Wei

doi:10.1109/EDTM61175.2025.11040628

Investigation of Enhanced Robustness Against Floating-Substrate-Induced Dynamic RON Degradation in 900-V p-GaN Gate HEMT Using Virtual-Body Technology

Hao Chang, Junjie Yang, Jingjing Yu, Jiawei Cui, Youyi Yin, Han Yang, Xuelin Yang, Jinyan Wang, Maojun Wang, Bo Shen, Jin Wei^*

^*Corresponding author for this work

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

Abstract

In this work, the enhanced robustness against floating-substrate-induced dynamic RON degradation in 900-V p-GaN gate HEMT with virtual body (VB-HEMT) is investigated. By adopting floating Si substrate, the breakdown voltage is boosted to 1779 V. Hole injection and buried AlGaN are found both essential for the formation of virtual body to suppress floating-substrate-induced negative buffer trapping effects. The VB-HEMT shows a superior dynamic RON/static RON ratio of 1.43 after 900-V VDS-OFF stress with floating substrate.

Original language	English
Title of host publication	9th IEEE Electron Devices Technology and Manufacturing Conference
Subtitle of host publication	Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798331504168
DOIs	https://doi.org/10.1109/EDTM61175.2025.11040628
Publication status	Published - 2025
Externally published	Yes
Event	9th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2025 - Hong Kong, Hong Kong Duration: 9 Mar 2025 → 12 Mar 2025

Publication series

Name	9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025

Conference

Conference	9th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2025
Country/Territory	Hong Kong
City	Hong Kong
Period	9/03/25 → 12/03/25

Bibliographical note

Publisher Copyright:
© 2025 IEEE.

Keywords

GaN-on-Si
Virtual body
dynamic RON
floating substrate
high voltage

Access to Document

10.1109/EDTM61175.2025.11040628

Cite this

Chang, H., Yang, J., Yu, J., Cui, J., Yin, Y., Yang, H., Yang, X., Wang, J., Wang, M., Shen, B., & Wei, J. (2025). Investigation of Enhanced Robustness Against Floating-Substrate-Induced Dynamic RON Degradation in 900-V p-GaN Gate HEMT Using Virtual-Body Technology. In 9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025 (9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM61175.2025.11040628

Chang, Hao ; Yang, Junjie ; Yu, Jingjing et al. / Investigation of Enhanced Robustness Against Floating-Substrate-Induced Dynamic RON Degradation in 900-V p-GaN Gate HEMT Using Virtual-Body Technology. 9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025. Institute of Electrical and Electronics Engineers Inc., 2025. (9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025).

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title = "Investigation of Enhanced Robustness Against Floating-Substrate-Induced Dynamic RON Degradation in 900-V p-GaN Gate HEMT Using Virtual-Body Technology",

abstract = "In this work, the enhanced robustness against floating-substrate-induced dynamic RON degradation in 900-V p-GaN gate HEMT with virtual body (VB-HEMT) is investigated. By adopting floating Si substrate, the breakdown voltage is boosted to 1779 V. Hole injection and buried AlGaN are found both essential for the formation of virtual body to suppress floating-substrate-induced negative buffer trapping effects. The VB-HEMT shows a superior dynamic RON/static RON ratio of 1.43 after 900-V VDS-OFF stress with floating substrate.",

keywords = "GaN-on-Si, Virtual body, dynamic RON, floating substrate, high voltage",

author = "Hao Chang and Junjie Yang and Jingjing Yu and Jiawei Cui and Youyi Yin and Han Yang and Xuelin Yang and Jinyan Wang and Maojun Wang and Bo Shen and Jin Wei",

note = "Publisher Copyright: {\textcopyright} 2025 IEEE.; 9th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2025 ; Conference date: 09-03-2025 Through 12-03-2025",

year = "2025",

doi = "10.1109/EDTM61175.2025.11040628",

language = "English",

series = "9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "9th IEEE Electron Devices Technology and Manufacturing Conference",

}

Chang, H, Yang, J, Yu, J, Cui, J, Yin, Y, Yang, H, Yang, X, Wang, J, Wang, M, Shen, B & Wei, J 2025, Investigation of Enhanced Robustness Against Floating-Substrate-Induced Dynamic RON Degradation in 900-V p-GaN Gate HEMT Using Virtual-Body Technology. in 9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025. 9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025, Institute of Electrical and Electronics Engineers Inc., 9th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2025, Hong Kong, Hong Kong, 9/03/25. https://doi.org/10.1109/EDTM61175.2025.11040628

Investigation of Enhanced Robustness Against Floating-Substrate-Induced Dynamic RON Degradation in 900-V p-GaN Gate HEMT Using Virtual-Body Technology. / Chang, Hao; Yang, Junjie; Yu, Jingjing et al.
9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025. Institute of Electrical and Electronics Engineers Inc., 2025. (9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Investigation of Enhanced Robustness Against Floating-Substrate-Induced Dynamic RON Degradation in 900-V p-GaN Gate HEMT Using Virtual-Body Technology

AU - Chang, Hao

AU - Yang, Junjie

AU - Yu, Jingjing

AU - Cui, Jiawei

AU - Yin, Youyi

AU - Yang, Han

AU - Yang, Xuelin

AU - Wang, Jinyan

AU - Wang, Maojun

AU - Shen, Bo

AU - Wei, Jin

PY - 2025

Y1 - 2025

N2 - In this work, the enhanced robustness against floating-substrate-induced dynamic RON degradation in 900-V p-GaN gate HEMT with virtual body (VB-HEMT) is investigated. By adopting floating Si substrate, the breakdown voltage is boosted to 1779 V. Hole injection and buried AlGaN are found both essential for the formation of virtual body to suppress floating-substrate-induced negative buffer trapping effects. The VB-HEMT shows a superior dynamic RON/static RON ratio of 1.43 after 900-V VDS-OFF stress with floating substrate.

AB - In this work, the enhanced robustness against floating-substrate-induced dynamic RON degradation in 900-V p-GaN gate HEMT with virtual body (VB-HEMT) is investigated. By adopting floating Si substrate, the breakdown voltage is boosted to 1779 V. Hole injection and buried AlGaN are found both essential for the formation of virtual body to suppress floating-substrate-induced negative buffer trapping effects. The VB-HEMT shows a superior dynamic RON/static RON ratio of 1.43 after 900-V VDS-OFF stress with floating substrate.

KW - GaN-on-Si

KW - Virtual body

KW - dynamic RON

KW - floating substrate

KW - high voltage

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UR - https://www.scopus.com/pages/publications/105010819285

U2 - 10.1109/EDTM61175.2025.11040628

DO - 10.1109/EDTM61175.2025.11040628

M3 - Conference Paper published in a book

AN - SCOPUS:105010819285

T3 - 9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025

BT - 9th IEEE Electron Devices Technology and Manufacturing Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 9th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2025

Y2 - 9 March 2025 through 12 March 2025

ER -

Chang H, Yang J, Yu J, Cui J, Yin Y, Yang H et al. Investigation of Enhanced Robustness Against Floating-Substrate-Induced Dynamic RON Degradation in 900-V p-GaN Gate HEMT Using Virtual-Body Technology. In 9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025. Institute of Electrical and Electronics Engineers Inc. 2025. (9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025). doi: 10.1109/EDTM61175.2025.11040628

Investigation of Enhanced Robustness Against Floating-Substrate-Induced Dynamic RON Degradation in 900-V p-GaN Gate HEMT Using Virtual-Body Technology

Abstract

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Keywords

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