Investigation of recessed channel SOI devices

Xing Zhang; Ru Huang; Xuemei Xi; Mansun Chan; Ping K. Ko; Yangyuan Wang

Investigation of recessed channel SOI devices

Xing Zhang^*, Ru Huang, Xuemei Xi, Mansun Chan, Ping K. Ko, Yangyuan Wang

^*Corresponding author for this work

Research output: Contribution to conference › Conference Paper › peer-review

Abstract

A recessed channel SOI devices were investigated. In this paper, the structure and the process of the recessed channel SOI devices were described in detail. The characteristics of SOI MOSFET using recessed channel technology are much better than normal thick non-depleted and thin-film fully depleted SOI MOSFETs. The 0.15 to approximately 4.0 μm recessed channel SOI MOSFETs which the silicon film of channel is 70 nm and silicon film of source/drain is 160 nm are developed using submicron process. The transconductance and drain current are increased 40% than thin-film fully depleted SOI MOSFETs.

Original language	English
Pages	720-723
Number of pages	4
Publication status	Published - 1998
Externally published	Yes
Event	Proceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China Duration: 21 Oct 1998 → 23 Oct 1998

Conference

Conference	Proceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology
City	Beijing, China
Period	21/10/98 → 23/10/98

Cite this

@conference{11e0f8a954b242d3b362511ee1a00aba,

title = "Investigation of recessed channel SOI devices",

abstract = "A recessed channel SOI devices were investigated. In this paper, the structure and the process of the recessed channel SOI devices were described in detail. The characteristics of SOI MOSFET using recessed channel technology are much better than normal thick non-depleted and thin-film fully depleted SOI MOSFETs. The 0.15 to approximately 4.0 μm recessed channel SOI MOSFETs which the silicon film of channel is 70 nm and silicon film of source/drain is 160 nm are developed using submicron process. The transconductance and drain current are increased 40\% than thin-film fully depleted SOI MOSFETs.",

author = "Xing Zhang and Ru Huang and Xuemei Xi and Mansun Chan and Ko, \{Ping K.\} and Yangyuan Wang",

year = "1998",

language = "English",

pages = "720--723",

note = "Proceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 21-10-1998 Through 23-10-1998",

}

TY - CONF

T1 - Investigation of recessed channel SOI devices

AU - Zhang, Xing

AU - Huang, Ru

AU - Xi, Xuemei

AU - Chan, Mansun

AU - Ko, Ping K.

AU - Wang, Yangyuan

PY - 1998

Y1 - 1998

N2 - A recessed channel SOI devices were investigated. In this paper, the structure and the process of the recessed channel SOI devices were described in detail. The characteristics of SOI MOSFET using recessed channel technology are much better than normal thick non-depleted and thin-film fully depleted SOI MOSFETs. The 0.15 to approximately 4.0 μm recessed channel SOI MOSFETs which the silicon film of channel is 70 nm and silicon film of source/drain is 160 nm are developed using submicron process. The transconductance and drain current are increased 40% than thin-film fully depleted SOI MOSFETs.

AB - A recessed channel SOI devices were investigated. In this paper, the structure and the process of the recessed channel SOI devices were described in detail. The characteristics of SOI MOSFET using recessed channel technology are much better than normal thick non-depleted and thin-film fully depleted SOI MOSFETs. The 0.15 to approximately 4.0 μm recessed channel SOI MOSFETs which the silicon film of channel is 70 nm and silicon film of source/drain is 160 nm are developed using submicron process. The transconductance and drain current are increased 40% than thin-film fully depleted SOI MOSFETs.

UR - https://www.scopus.com/pages/publications/0032226842

M3 - Conference Paper

AN - SCOPUS:0032226842

SP - 720

EP - 723

T2 - Proceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology

Y2 - 21 October 1998 through 23 October 1998

ER -

Investigation of recessed channel SOI devices

Abstract

Conference

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