TY - GEN
T1 - Kinetics study of disulfide self assembly monolayer (SAM) deposition for Cu-EMC adhesion promotion
AU - Wong, Cell K.Y.
AU - Zheng, Min
AU - Xu, Bing
AU - Yuen, Matthew M.F.
PY - 2006
Y1 - 2006
N2 - This paper presents a study of disulfide self assembly monolayer (SAM) onto sputtered Cu substrate. Extrinsic parameter includes substrate roughness, solution concentration, deposition time and agitation has been investigated. Ellipsometer was used to measure the SAM thickness to investigate impact of process parameter on homogenous film quality. 500Å sputtered Cu on Si wafer having roughness of around 10Å is recommended to be used as substrate in the process. It has been discovered that agitation which prevents local concentration of disulfide solution, is crucial for success of film deposition. Without agitation, larger thickness variation has been attained (36±22Å comparing with 30±16Å). Furthermore, relatively uniform film (37±10Å for DS-A, 30±8Å for DS-C) can be realized from low concentration (0.5ptM) ethanol in lhr. Atomic Force Microscope (AFM) has been used to probe topography images of deposited film. No significant aggregates but few pinholes have been found on disulfide treated surface. An experiment procedure in obtaining uniform thin film from disulfide solution on Cu substrate has been investigated.
AB - This paper presents a study of disulfide self assembly monolayer (SAM) onto sputtered Cu substrate. Extrinsic parameter includes substrate roughness, solution concentration, deposition time and agitation has been investigated. Ellipsometer was used to measure the SAM thickness to investigate impact of process parameter on homogenous film quality. 500Å sputtered Cu on Si wafer having roughness of around 10Å is recommended to be used as substrate in the process. It has been discovered that agitation which prevents local concentration of disulfide solution, is crucial for success of film deposition. Without agitation, larger thickness variation has been attained (36±22Å comparing with 30±16Å). Furthermore, relatively uniform film (37±10Å for DS-A, 30±8Å for DS-C) can be realized from low concentration (0.5ptM) ethanol in lhr. Atomic Force Microscope (AFM) has been used to probe topography images of deposited film. No significant aggregates but few pinholes have been found on disulfide treated surface. An experiment procedure in obtaining uniform thin film from disulfide solution on Cu substrate has been investigated.
UR - https://www.scopus.com/pages/publications/51449106918
U2 - 10.1109/EMAP.2006.4430633
DO - 10.1109/EMAP.2006.4430633
M3 - Conference Paper published in a book
AN - SCOPUS:51449106918
SN - 1424408342
SN - 9781424408344
T3 - 2006 International Conference on Electronic Materials and Packaging, EMAP
BT - 2006 International Conference on Electronic Materials and Packaging, EMAP
T2 - 2006 International Conference on Electronic Materials and Packaging, EMAP
Y2 - 11 December 2006 through 14 December 2006
ER -