Latch-up immunized lateral trench-gate conductivity modulated power transistor

Jun Cai; Keng Foo Lo; Johnny K.O. Sin

Latch-up immunized lateral trench-gate conductivity modulated power transistor

Jun Cai^*, Keng Foo Lo, Johnny K.O. Sin

^*Corresponding author for this work

Research output: Contribution to conference › Conference Paper › peer-review

1 Citation (Scopus)

Abstract

In this paper, a latch-up immunized Lateral Trench-Gate Bipolar Transistor (LTGBT) is presented with its numerical simulations and experimental results. The current at which the latch-up occurs in the structure is estimated in comparison with that of the lateral IGBT (LIGBT). The static and dynamic latch-up current densities of the LTGBT were 700 A/cm² and 640 A/cm², respectively. These results indicate the improvement of 2.3 times and 4.2 times with those for the LIGBT at the same n+ cathode length of 5 μm. The dependence of the latch-up current density on the design of the n+ and p+ cathode regions of the structure is also examined. The maximum controllable current density is found to increase with decreasing the space between the trench gate and the p+ cathode. Specifically, as the space decreases to 2 μm, no latch-up phenomenon was observed in our experiment. This remarkable improvement in the latch-up performance is accomplished at the expense of an increase of 0.8 V in the threshold voltage.

Original language	English
Pages	168-172
Number of pages	5
Publication status	Published - 1999
Externally published	Yes
Event	Proceedings of the 1999 7th International Symposium on Physical and Failure Analysis of Integrated Circuits - Singapore, Singapore Duration: 5 Jul 1999 → 9 Jul 1999

Conference

Conference	Proceedings of the 1999 7th International Symposium on Physical and Failure Analysis of Integrated Circuits
City	Singapore, Singapore
Period	5/07/99 → 9/07/99

Cite this

@conference{c6f252e5bcb24ef2ba99d4e6a114fb1c,

title = "Latch-up immunized lateral trench-gate conductivity modulated power transistor",

abstract = "In this paper, a latch-up immunized Lateral Trench-Gate Bipolar Transistor (LTGBT) is presented with its numerical simulations and experimental results. The current at which the latch-up occurs in the structure is estimated in comparison with that of the lateral IGBT (LIGBT). The static and dynamic latch-up current densities of the LTGBT were 700 A/cm2 and 640 A/cm2, respectively. These results indicate the improvement of 2.3 times and 4.2 times with those for the LIGBT at the same n+ cathode length of 5 μm. The dependence of the latch-up current density on the design of the n+ and p+ cathode regions of the structure is also examined. The maximum controllable current density is found to increase with decreasing the space between the trench gate and the p+ cathode. Specifically, as the space decreases to 2 μm, no latch-up phenomenon was observed in our experiment. This remarkable improvement in the latch-up performance is accomplished at the expense of an increase of 0.8 V in the threshold voltage.",

author = "Jun Cai and Lo, \{Keng Foo\} and Sin, \{Johnny K.O.\}",

year = "1999",

language = "English",

pages = "168--172",

note = "Proceedings of the 1999 7th International Symposium on Physical and Failure Analysis of Integrated Circuits ; Conference date: 05-07-1999 Through 09-07-1999",

}

TY - CONF

T1 - Latch-up immunized lateral trench-gate conductivity modulated power transistor

AU - Cai, Jun

AU - Lo, Keng Foo

AU - Sin, Johnny K.O.

PY - 1999

Y1 - 1999

N2 - In this paper, a latch-up immunized Lateral Trench-Gate Bipolar Transistor (LTGBT) is presented with its numerical simulations and experimental results. The current at which the latch-up occurs in the structure is estimated in comparison with that of the lateral IGBT (LIGBT). The static and dynamic latch-up current densities of the LTGBT were 700 A/cm2 and 640 A/cm2, respectively. These results indicate the improvement of 2.3 times and 4.2 times with those for the LIGBT at the same n+ cathode length of 5 μm. The dependence of the latch-up current density on the design of the n+ and p+ cathode regions of the structure is also examined. The maximum controllable current density is found to increase with decreasing the space between the trench gate and the p+ cathode. Specifically, as the space decreases to 2 μm, no latch-up phenomenon was observed in our experiment. This remarkable improvement in the latch-up performance is accomplished at the expense of an increase of 0.8 V in the threshold voltage.

AB - In this paper, a latch-up immunized Lateral Trench-Gate Bipolar Transistor (LTGBT) is presented with its numerical simulations and experimental results. The current at which the latch-up occurs in the structure is estimated in comparison with that of the lateral IGBT (LIGBT). The static and dynamic latch-up current densities of the LTGBT were 700 A/cm2 and 640 A/cm2, respectively. These results indicate the improvement of 2.3 times and 4.2 times with those for the LIGBT at the same n+ cathode length of 5 μm. The dependence of the latch-up current density on the design of the n+ and p+ cathode regions of the structure is also examined. The maximum controllable current density is found to increase with decreasing the space between the trench gate and the p+ cathode. Specifically, as the space decreases to 2 μm, no latch-up phenomenon was observed in our experiment. This remarkable improvement in the latch-up performance is accomplished at the expense of an increase of 0.8 V in the threshold voltage.

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M3 - Conference Paper

AN - SCOPUS:0033284317

SP - 168

EP - 172

T2 - Proceedings of the 1999 7th International Symposium on Physical and Failure Analysis of Integrated Circuits

Y2 - 5 July 1999 through 9 July 1999

ER -

Latch-up immunized lateral trench-gate conductivity modulated power transistor

Abstract

Conference

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