TY - JOUR
T1 - Lateral Insulated-Gate Bipolar Transistor (LIGBT) with a Segmented Anode Structure
AU - Sin, Johnny K.O.
AU - Mukherjee, Satyen
PY - 1991/2
Y1 - 1991/2
N2 - A new lateral insulated-gate bipolar transistor (LIGBT) structure, called the segmented anode LIGBT, is presented. In this structure, the anode, which is responsible for the injection of minority carriers for conductivity modulation, is implemented using segments of p+ and n+ diffusions along the device width. This segmented design of the anode structure results in higher switching speed and reduction in device size. Depending on the value of the specific ON resistance, experimental results show that the segmented anode LIGBT has from 20% to 250% reduction in turn-off time as compared to the shorted anode LIGBT.
AB - A new lateral insulated-gate bipolar transistor (LIGBT) structure, called the segmented anode LIGBT, is presented. In this structure, the anode, which is responsible for the injection of minority carriers for conductivity modulation, is implemented using segments of p+ and n+ diffusions along the device width. This segmented design of the anode structure results in higher switching speed and reduction in device size. Depending on the value of the specific ON resistance, experimental results show that the segmented anode LIGBT has from 20% to 250% reduction in turn-off time as compared to the shorted anode LIGBT.
UR - https://www.webofscience.com/wos/woscc/full-record/WOS:A1991EU68900004
UR - https://openalex.org/W2026695766
UR - https://www.scopus.com/pages/publications/0026106048
U2 - 10.1109/55.75699
DO - 10.1109/55.75699
M3 - Journal Article
SN - 0741-3106
VL - 12
SP - 45
EP - 47
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 2
ER -