Latest progress in gallium-oxide electronic devices

Masataka Higashiwaki; Man Hoi Wong; Keita Konishi; Yoshiaki Nakata; Chia Hung Lin; Takafumi Kamimura; Lingaparthi Ravikiran; Kohei Sasaki; Ken Goto; Akinori Takeyama; Takahiro Makino; Takeshi Ohshima; Akito Kuramata; Shigenobu Yamakoshi; Hisashi Murakami; Yoshinao Kumagai

doi:10.1117/12.2292666

Latest progress in gallium-oxide electronic devices

Masataka Higashiwaki^*, Man Hoi Wong, Keita Konishi, Yoshiaki Nakata, Chia Hung Lin, Takafumi Kamimura, Lingaparthi Ravikiran, Kohei Sasaki, Ken Goto, Akinori Takeyama, Takahiro Makino, Takeshi Ohshima, Akito Kuramata, Shigenobu Yamakoshi, Hisashi Murakami, Yoshinao Kumagai

^*Corresponding author for this work

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

Abstract

Gallium oxide (Ga₂O₃) has emerged as a new competitor to SiC and GaN in the race toward next-generation power switching and harsh environment electronics by virtue of the excellent material properties and the relative ease of mass wafer production. In this proceedings paper, an overview of our recent development progress of Ga₂O₃ metal-oxide-semiconductor field-effect transistors and Schottky barrier diodes will be reported.

Original language	English
Title of host publication	Oxide-Based Materials and Devices IX
Editors	David J. Rogers, Ferechteh H. Teherani, David C. Look
Publisher	SPIE
ISBN (Electronic)	9781510615519
DOIs	https://doi.org/10.1117/12.2292666
Publication status	Published - 2018
Externally published	Yes
Event	Oxide-Based Materials and Devices IX 2018 - San Francisco, United States Duration: 28 Jan 2018 → 1 Feb 2018

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	10533
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Oxide-Based Materials and Devices IX 2018
Country/Territory	United States
City	San Francisco
Period	28/01/18 → 1/02/18

Bibliographical note

Publisher Copyright:
© Copyright 2018 SPIE.

Keywords

Gallium oxide (GaO)
Schottky barrier diode (SBD)
harsh environment electronics
metal-oxide-semiconductor field-effect transistor (MOSFET)
power electronics

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10.1117/12.2292666

Cite this

Higashiwaki, M., Wong, M. H., Konishi, K., Nakata, Y., Lin, C. H., Kamimura, T., Ravikiran, L., Sasaki, K., Goto, K., Takeyama, A., Makino, T., Ohshima, T., Kuramata, A., Yamakoshi, S., Murakami, H., & Kumagai, Y. (2018). Latest progress in gallium-oxide electronic devices. In D. J. Rogers, F. H. Teherani, & D. C. Look (Eds.), Oxide-Based Materials and Devices IX Article 105330O (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10533). SPIE. https://doi.org/10.1117/12.2292666

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title = "Latest progress in gallium-oxide electronic devices",

abstract = "Gallium oxide (Ga2O3) has emerged as a new competitor to SiC and GaN in the race toward next-generation power switching and harsh environment electronics by virtue of the excellent material properties and the relative ease of mass wafer production. In this proceedings paper, an overview of our recent development progress of Ga2O3 metal-oxide-semiconductor field-effect transistors and Schottky barrier diodes will be reported.",

keywords = "Gallium oxide (GaO), Schottky barrier diode (SBD), harsh environment electronics, metal-oxide-semiconductor field-effect transistor (MOSFET), power electronics",

author = "Masataka Higashiwaki and Wong, \{Man Hoi\} and Keita Konishi and Yoshiaki Nakata and Lin, \{Chia Hung\} and Takafumi Kamimura and Lingaparthi Ravikiran and Kohei Sasaki and Ken Goto and Akinori Takeyama and Takahiro Makino and Takeshi Ohshima and Akito Kuramata and Shigenobu Yamakoshi and Hisashi Murakami and Yoshinao Kumagai",

year = "2018",

doi = "10.1117/12.2292666",

language = "English",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Rogers, \{David J.\} and Teherani, \{Ferechteh H.\} and Look, \{David C.\}",

booktitle = "Oxide-Based Materials and Devices IX",

}

Higashiwaki, M, Wong, MH, Konishi, K, Nakata, Y, Lin, CH, Kamimura, T, Ravikiran, L, Sasaki, K, Goto, K, Takeyama, A, Makino, T, Ohshima, T, Kuramata, A, Yamakoshi, S, Murakami, H & Kumagai, Y 2018, Latest progress in gallium-oxide electronic devices. in DJ Rogers, FH Teherani & DC Look (eds), Oxide-Based Materials and Devices IX., 105330O, Proceedings of SPIE - The International Society for Optical Engineering, vol. 10533, SPIE, Oxide-Based Materials and Devices IX 2018, San Francisco, United States, 28/01/18. https://doi.org/10.1117/12.2292666

Latest progress in gallium-oxide electronic devices. / Higashiwaki, Masataka; Wong, Man Hoi; Konishi, Keita et al.
Oxide-Based Materials and Devices IX. ed. / David J. Rogers; Ferechteh H. Teherani; David C. Look. SPIE, 2018. 105330O (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10533).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

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AU - Nakata, Yoshiaki

AU - Lin, Chia Hung

AU - Kamimura, Takafumi

AU - Ravikiran, Lingaparthi

AU - Sasaki, Kohei

AU - Goto, Ken

AU - Takeyama, Akinori

AU - Makino, Takahiro

AU - Ohshima, Takeshi

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AU - Yamakoshi, Shigenobu

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AB - Gallium oxide (Ga2O3) has emerged as a new competitor to SiC and GaN in the race toward next-generation power switching and harsh environment electronics by virtue of the excellent material properties and the relative ease of mass wafer production. In this proceedings paper, an overview of our recent development progress of Ga2O3 metal-oxide-semiconductor field-effect transistors and Schottky barrier diodes will be reported.

KW - Gallium oxide (GaO)

KW - Schottky barrier diode (SBD)

KW - harsh environment electronics

KW - metal-oxide-semiconductor field-effect transistor (MOSFET)

KW - power electronics

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BT - Oxide-Based Materials and Devices IX

A2 - Rogers, David J.

A2 - Teherani, Ferechteh H.

A2 - Look, David C.

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Y2 - 28 January 2018 through 1 February 2018

ER -

Latest progress in gallium-oxide electronic devices

Abstract

Publication series

Conference

Bibliographical note

Keywords

Access to Document

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