Lattice-matched AlInN/GaN digital alloy for mid- and deep-ultraviolet applications

Wei Sun; Chee Keong Tan; Nelson Tansu

doi:10.1109/IPCon.2017.8116093

Lattice-matched AlInN/GaN digital alloy for mid- and deep-ultraviolet applications

Wei Sun, Chee Keong Tan, Nelson Tansu

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

Abstract

A lattice-matched AlInGaN digital alloy structure is studied based on the lattice-matched AlInN/GaN ultra-short period superlattices. The numerical findings suggest the potential capabilities of such AlInN/GaN digital alloy in mid- and deep-ultraviolet applications attributed to its tunable bandgap and broadband optical transitions.

Original language	English
Title of host publication	30th Annual Conference of the IEEE Photonics Society, IPC 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	255-256
Number of pages	2
ISBN (Electronic)	9781509065783
DOIs	https://doi.org/10.1109/IPCon.2017.8116093
Publication status	Published - 20 Nov 2017
Externally published	Yes
Event	30th Annual Conference of the IEEE Photonics Society, IPC 2017 - Lake Buena Vista, United States Duration: 1 Oct 2017 → 5 Oct 2017

Publication series

Name	30th Annual Conference of the IEEE Photonics Society, IPC 2017
Volume	2017-January

Conference

Conference	30th Annual Conference of the IEEE Photonics Society, IPC 2017
Country/Territory	United States
City	Lake Buena Vista
Period	1/10/17 → 5/10/17

Bibliographical note

Publisher Copyright:
© 2017 IEEE.

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10.1109/IPCon.2017.8116093

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Sun, W., Tan, C. K., & Tansu, N. (2017). Lattice-matched AlInN/GaN digital alloy for mid- and deep-ultraviolet applications. In 30th Annual Conference of the IEEE Photonics Society, IPC 2017 (pp. 255-256). (30th Annual Conference of the IEEE Photonics Society, IPC 2017; Vol. 2017-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPCon.2017.8116093

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title = "Lattice-matched AlInN/GaN digital alloy for mid- and deep-ultraviolet applications",

abstract = "A lattice-matched AlInGaN digital alloy structure is studied based on the lattice-matched AlInN/GaN ultra-short period superlattices. The numerical findings suggest the potential capabilities of such AlInN/GaN digital alloy in mid- and deep-ultraviolet applications attributed to its tunable bandgap and broadband optical transitions.",

author = "Wei Sun and Tan, \{Chee Keong\} and Nelson Tansu",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 30th Annual Conference of the IEEE Photonics Society, IPC 2017 ; Conference date: 01-10-2017 Through 05-10-2017",

year = "2017",

month = nov,

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doi = "10.1109/IPCon.2017.8116093",

language = "English",

series = "30th Annual Conference of the IEEE Photonics Society, IPC 2017",

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Sun, W, Tan, CK & Tansu, N 2017, Lattice-matched AlInN/GaN digital alloy for mid- and deep-ultraviolet applications. in 30th Annual Conference of the IEEE Photonics Society, IPC 2017. 30th Annual Conference of the IEEE Photonics Society, IPC 2017, vol. 2017-January, Institute of Electrical and Electronics Engineers Inc., pp. 255-256, 30th Annual Conference of the IEEE Photonics Society, IPC 2017, Lake Buena Vista, United States, 1/10/17. https://doi.org/10.1109/IPCon.2017.8116093

Lattice-matched AlInN/GaN digital alloy for mid- and deep-ultraviolet applications. / Sun, Wei; Tan, Chee Keong; Tansu, Nelson.
30th Annual Conference of the IEEE Photonics Society, IPC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 255-256 (30th Annual Conference of the IEEE Photonics Society, IPC 2017; Vol. 2017-January).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

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N2 - A lattice-matched AlInGaN digital alloy structure is studied based on the lattice-matched AlInN/GaN ultra-short period superlattices. The numerical findings suggest the potential capabilities of such AlInN/GaN digital alloy in mid- and deep-ultraviolet applications attributed to its tunable bandgap and broadband optical transitions.

AB - A lattice-matched AlInGaN digital alloy structure is studied based on the lattice-matched AlInN/GaN ultra-short period superlattices. The numerical findings suggest the potential capabilities of such AlInN/GaN digital alloy in mid- and deep-ultraviolet applications attributed to its tunable bandgap and broadband optical transitions.

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Lattice-matched AlInN/GaN digital alloy for mid- and deep-ultraviolet applications

Abstract

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