Levels of33S excited by α-capture reactions

O. B. Okon*, H. Bakhru, P. Sen, N. Cue

*Corresponding author for this work

Research output: Contribution to journalJournal Articlepeer-review

3 Citations (Scopus)

Abstract

Highly excited levels of33S populated by α-particle capture in29Si have been investigated for Eα=1.962 MeV to 4.287 MeV. Excitation curves measured with Ge(Li) and BF3 detectors are reported. More than fifty resonances can be identified with levels in33S. (α, γ) angular distributions measured on five strong resonances have yielded Jπ values 1/2+, 3/2 +, 5/2-, 5/2-, 5/2- and 3/2+ respectively, for the Ex=10.054, 10.466, 10.523, 10.721, 10.758 and 10.776 MeV levels in33S. Elastic scattering experiments have been performed and the Jπ assignments are found to be consistent with the l-values inferred from the elastic scattering data. Decay schemes from the above33S levels have been proposed. A new level at 9.245 MeV is also suggested and the Jπ values for the 4.425 and 2.87 MeV states are shown to be consistent with 7/2+ and 3/2+ assignment, respectively. Nuclear Reactions29Si(α, γ) and29Si(α, α), Eα=1.962-4.287 MeV. Measured relative σ(E). Deduced Jπ and Eγ of33S levels. New33S level at Ex=9.245 MeV. Enriched targets.

Original languageEnglish
Pages (from-to)207-214
Number of pages8
JournalZeitschrift für Physik A: Atoms and Nuclei
Volume285
Issue number2
DOIs
Publication statusPublished - Jun 1978
Externally publishedYes

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