Lifshitz transition mediated electronic transport anomaly in bulk ZrTe₅

Zirconium pentatelluride ZrTe₅, a fascinating topological material platform, hosts exotic chiral fermions in its highly anisotropic three-dimensional Dirac band and holds great promise advancing the next-generation information technology. However, the origin underlying its anomalous resistivity peak has been under debate for decades. Here we provide transport evidence substantiating the anomaly to be a direct manifestation of a Lifshitz transition in the Dirac band with an ultrahigh carrier mobility exceeding 3 ×10⁵ cm² V^-1 s^-1. We demonstrate that the Lifshitz transition is readily controllable by means of carrier doping, which sets the anomaly peak temperature T _p. T _p is found to scale approximately as where the Hall carrier concentration n _H is linked with the Fermi level by ϵ _F ∝ in a linearly dispersed Dirac band. This relation indicates T _p monotonically increases with ϵ _F, which serves as an effective knob for fine tuning transport properties in pentatelluride-based Dirac semimetals.