Light emission from high bias Al-AlOx-Au tunnel junctions

Q. Q. Shu; W. J. Wen; S. J. Xu

doi:10.1063/1.342550

Light emission from high bias Al-AlO_x-Au tunnel junctions

Q. Q. Shu^*, W. J. Wen, S. J. Xu

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

6 Citations (Scopus)

Abstract

An observation of the Al-AlO_x-Au light emitting tunneling junctions deposited on the underlayers of CaF₂ has been made. The applied bias can be up to 5.12 V at room temperature, and the efficiencies were in the 10^-4 range and one order higher than before. The emission spectra are characterized by the cutoff frequency near 3.26 eV and the lack of the emission from the radiative mode of surface plasmon polariton.

Original language	English
Pages (from-to)	373-375
Number of pages	3
Journal	Journal of Applied Physics
Volume	65
Issue number	1
DOIs	https://doi.org/10.1063/1.342550
Publication status	Published - 1989
Externally published	Yes

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10.1063/1.342550

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@article{2af36f364c8a4bca841cca458109dc8f,

title = "Light emission from high bias Al-AlOx-Au tunnel junctions",

abstract = "An observation of the Al-AlOx-Au light emitting tunneling junctions deposited on the underlayers of CaF2 has been made. The applied bias can be up to 5.12 V at room temperature, and the efficiencies were in the 10-4 range and one order higher than before. The emission spectra are characterized by the cutoff frequency near 3.26 eV and the lack of the emission from the radiative mode of surface plasmon polariton.",

author = "Shu, \{Q. Q.\} and Wen, \{W. J.\} and Xu, \{S. J.\}",

year = "1989",

doi = "10.1063/1.342550",

language = "English",

volume = "65",

pages = "373--375",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "1",

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TY - JOUR

T1 - Light emission from high bias Al-AlOx-Au tunnel junctions

AU - Shu, Q. Q.

AU - Wen, W. J.

AU - Xu, S. J.

PY - 1989

Y1 - 1989

N2 - An observation of the Al-AlOx-Au light emitting tunneling junctions deposited on the underlayers of CaF2 has been made. The applied bias can be up to 5.12 V at room temperature, and the efficiencies were in the 10-4 range and one order higher than before. The emission spectra are characterized by the cutoff frequency near 3.26 eV and the lack of the emission from the radiative mode of surface plasmon polariton.

AB - An observation of the Al-AlOx-Au light emitting tunneling junctions deposited on the underlayers of CaF2 has been made. The applied bias can be up to 5.12 V at room temperature, and the efficiencies were in the 10-4 range and one order higher than before. The emission spectra are characterized by the cutoff frequency near 3.26 eV and the lack of the emission from the radiative mode of surface plasmon polariton.

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:A1989R470600058

UR - https://openalex.org/W2005427704

U2 - 10.1063/1.342550

DO - 10.1063/1.342550

M3 - Journal Article

SN - 0021-8979

VL - 65

SP - 373

EP - 375

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

ER -

Light emission from high bias Al-AlO_x-Au tunnel junctions

Abstract

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