Abstract
In this paper, the gallium nitride (GaN) free-standing non-polar m-plane micro-LEDs and polar c-plane micro-LEDs on patterned sapphire substrate with a 550-nm emission light were fabricated and characterized. Compared with c-plane micro- LEDs suffering from strong quantum confined stark effect (QCSE), the absence of polarization effect in m-plane devices contributed to a lower efficiency attenuation and narrower peak and color shift with elevating current density. Specifically, the peak wavelength shift for c-plane and m-plane micro-LEDs was 81 nm and 8.12 nm respectively from 1 to 500 A/cm2, and the efficiency droop ratio was 50.2% for c-plane and 27.2% for m- plane devices from 0.1 to 300 A/cm2. Importantly, our m-plane micro-LEDs achieved a stable monochromaticity and wider color gamut under different injection current density (97.9% and 98.2% of Rec. 2020 at 1 and 500 A/cm2).
| Original language | English |
|---|---|
| Pages (from-to) | 541-544 |
| Number of pages | 4 |
| Journal | Digest of Technical Papers - SID International Symposium |
| Volume | 53 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2022 |
| Event | 59th International Symposium, Seminar and Exhibition, Display Week 2022 - San Jose, United States Duration: 8 May 2022 → 13 May 2022 |
Bibliographical note
Publisher Copyright:© 2022 SID.
Keywords
- Efficiency attenuation
- GaN-based Micro-LEDs
- Non-polar m-plane
- Polar c-plane
- Stable monochromaticity