TY - JOUR
T1 - Low temperature floating plasma oxidation of poly-SiGe
AU - Fan, Z.
AU - Zhao, G.
AU - Chu, P. K.
AU - Jin, Z.
AU - Kwok, H.
AU - Wong, M.
PY - 1998
Y1 - 1998
N2 - Low temperature oxidation is an essential process for thin-film transistors (TFT) used in active-matrix liquid crystal displays (AMLCD). However, low temperature oxidation gives rise to defects at SiO2/poly-SiGe interfaces. We have recently developed a novel plasma oxidation method for poly-SiGe materials. The poly-SiGe wafers are soaked in 0.1 Torr pure oxygen RF (Radio Frequency) plasma and isolated. That is, the sample voltage is the same as the sheath potential of the floating wall, which is always negative since electrons move faster than ions. The defects caused by ion impact can therefore be reduced. No heating is applied during oxidation, as the sample is heated slightly by the plasma. Under our conditions, the temperature is below 100 °C even after oxidation for two hours. Depth profiles are acquired by AES and the oxide/substrate interface is examined by XPS. NMOS devices fabricated using this gate oxide show good characteristics.
AB - Low temperature oxidation is an essential process for thin-film transistors (TFT) used in active-matrix liquid crystal displays (AMLCD). However, low temperature oxidation gives rise to defects at SiO2/poly-SiGe interfaces. We have recently developed a novel plasma oxidation method for poly-SiGe materials. The poly-SiGe wafers are soaked in 0.1 Torr pure oxygen RF (Radio Frequency) plasma and isolated. That is, the sample voltage is the same as the sheath potential of the floating wall, which is always negative since electrons move faster than ions. The defects caused by ion impact can therefore be reduced. No heating is applied during oxidation, as the sample is heated slightly by the plasma. Under our conditions, the temperature is below 100 °C even after oxidation for two hours. Depth profiles are acquired by AES and the oxide/substrate interface is examined by XPS. NMOS devices fabricated using this gate oxide show good characteristics.
UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000077248500024
UR - https://openalex.org/W2116103560
UR - https://www.scopus.com/pages/publications/0032320119
U2 - 10.1557/proc-508-157
DO - 10.1557/proc-508-157
M3 - Conference article published in journal
SN - 0272-9172
VL - 508
SP - 157
EP - 160
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Proceedings of the 1998 MRS Spring Symposium
Y2 - 13 April 1998 through 15 April 1998
ER -