MBE grown monocrystalline GaAs films on polycrystalline AlN thick films for power device applications

Y. Wang; Leung Yee Wai; Hui Liu; Xixiang Zhang; Yuchun Chang; Hailin Luo; Liren Lou; Rong Chuan Fang

doi:10.1016/S0022-0248(01)00659-5

MBE grown monocrystalline GaAs films on polycrystalline AlN thick films for power device applications

Y. Wang^*, Leung Yee Wai, Hui Liu, Xixiang Zhang, Yuchun Chang, Hailin Luo, Liren Lou, Rong Chuan Fang

^*Corresponding author for this work

Research output: Contribution to journal › Conference article published in journal › peer-review

2 Citations (Scopus)

Abstract

A device-quality GaAs monocrystalline films were fabricated on AlN polycrystalline films. The X-ray characterization reveals that the (001) preferential orientated AlN thick films with very low stress can be grown by DC reactive sputtering. The photothermal deflection spectroscopic measurements of the GaAs-on-AlN composite material show that a reasonably high thermal conductivity can be obtained. Hall measurements and I-V characteristics of Schottky diodes show that the epi-GaAs films on AlN thick films have similar electric properties of bulk materials.

Original language	English
Pages (from-to)	177-182
Number of pages	6
Journal	Journal of Crystal Growth
Volume	227-228
DOIs	https://doi.org/10.1016/S0022-0248(01)00659-5
Publication status	Published - Jul 2001
Externally published	Yes
Event	11th International Conference on Molecular Beam Epitaxy - Bijing, China Duration: 11 Sept 2000 → 15 Sept 2000

Keywords

A3. Polycrystalline deposition
B1. Nitrides
B2. Semiconducting gallium arsenide

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10.1016/S0022-0248(01)00659-5

Cite this

@article{50609294cdbd42ba875ad7c0fd80edfc,

title = "MBE grown monocrystalline GaAs films on polycrystalline AlN thick films for power device applications",

abstract = "A device-quality GaAs monocrystalline films were fabricated on AlN polycrystalline films. The X-ray characterization reveals that the (001) preferential orientated AlN thick films with very low stress can be grown by DC reactive sputtering. The photothermal deflection spectroscopic measurements of the GaAs-on-AlN composite material show that a reasonably high thermal conductivity can be obtained. Hall measurements and I-V characteristics of Schottky diodes show that the epi-GaAs films on AlN thick films have similar electric properties of bulk materials.",

keywords = "A3. Polycrystalline deposition, B1. Nitrides, B2. Semiconducting gallium arsenide",

author = "Y. Wang and Wai, \{Leung Yee\} and Hui Liu and Xixiang Zhang and Yuchun Chang and Hailin Luo and Liren Lou and Fang, \{Rong Chuan\}",

year = "2001",

month = jul,

doi = "10.1016/S0022-0248(01)00659-5",

language = "English",

volume = "227-228",

pages = "177--182",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

note = "11th International Conference on Molecular Beam Epitaxy ; Conference date: 11-09-2000 Through 15-09-2000",

}

TY - JOUR

T1 - MBE grown monocrystalline GaAs films on polycrystalline AlN thick films for power device applications

AU - Wang, Y.

AU - Wai, Leung Yee

AU - Liu, Hui

AU - Zhang, Xixiang

AU - Chang, Yuchun

AU - Luo, Hailin

AU - Lou, Liren

AU - Fang, Rong Chuan

PY - 2001/7

Y1 - 2001/7

N2 - A device-quality GaAs monocrystalline films were fabricated on AlN polycrystalline films. The X-ray characterization reveals that the (001) preferential orientated AlN thick films with very low stress can be grown by DC reactive sputtering. The photothermal deflection spectroscopic measurements of the GaAs-on-AlN composite material show that a reasonably high thermal conductivity can be obtained. Hall measurements and I-V characteristics of Schottky diodes show that the epi-GaAs films on AlN thick films have similar electric properties of bulk materials.

AB - A device-quality GaAs monocrystalline films were fabricated on AlN polycrystalline films. The X-ray characterization reveals that the (001) preferential orientated AlN thick films with very low stress can be grown by DC reactive sputtering. The photothermal deflection spectroscopic measurements of the GaAs-on-AlN composite material show that a reasonably high thermal conductivity can be obtained. Hall measurements and I-V characteristics of Schottky diodes show that the epi-GaAs films on AlN thick films have similar electric properties of bulk materials.

KW - A3. Polycrystalline deposition

KW - B1. Nitrides

KW - B2. Semiconducting gallium arsenide

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000169557600034

UR - https://openalex.org/W2087104831

UR - https://www.scopus.com/pages/publications/0035398813

U2 - 10.1016/S0022-0248(01)00659-5

DO - 10.1016/S0022-0248(01)00659-5

M3 - Conference article published in journal

SN - 0022-0248

VL - 227-228

SP - 177

EP - 182

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

T2 - 11th International Conference on Molecular Beam Epitaxy

Y2 - 11 September 2000 through 15 September 2000

ER -

MBE grown monocrystalline GaAs films on polycrystalline AlN thick films for power device applications

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Keywords

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